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APTM50DAM17G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 500V 180A SP6. Review the specifications below when checking this part for your BOM.
The APTM50DAM17G is a silicon-based N-Channel MOSFET module from Microchip Technology, designed for high-power applications. It features a 500V drain-source breakdown voltage and supports a continuous drain current of 180A at case temperature. The device offers a maximum power dissipation of 1250W under thermal conditions. Packaged in an SP6 chassis mount configuration, it integrates fast recovery freewheeling diodes within the Power MOS 7 series architecture.
Verify the specific suffix 'G' indicates RoHS compliance status as per manufacturer documentation. Confirm that the SP6 package dimensions match your chassis design constraints. Ensure thermal interface materials are compatible with the specified 1250W dissipation rating to maintain safe operating temperatures during peak load conditions.
Select this component when a single-chip solution combining a high-current MOSFET and a complementary fast-recovery diode is required. The 500V rating suits medium-voltage AC/DC conversion systems. Consider the SP6 package size for mechanical integration and verify gate drive requirements align with the N-Channel threshold characteristics for efficient switching control.
This module belongs to the APTM50HM series, representing Microchip's discrete and power modules category. It utilizes standard silicon technology and falls under the broader Power MOS 7 product line, which focuses on high-efficiency power switching solutions for demanding electronic applications requiring reliable thermal management.
Cross-reference with other APTM50HM variants such as APTM50H14FT3G or APTM50UM13SAG for alternative pinouts or electrical ratings. Verify compatibility with existing PCB layouts and cooling structures before substituting, as package types like SP3F differ from the SP6 configuration.
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