AS2324

Single FETs, MOSFETs Overview

The AS2324 is an N-Channel Enhancement Mode MOSFET manufactured by ANBON SEMICONDUCTOR (INT'L) LIMITED. It features a Drain-Source Voltage (VDS) of 100 V and a continuous Drain Current (ID) of 2 A. The device exhibits a maximum Drain-Source On-Resistance (RDS(on)) of 280 mΩ at VGS = 10 V and 310 mΩ at VGS = 4.5 V, both tested at ID = 2 A. Packaged in SOT-23, it supports a Power Dissipation (PD) of 1.2 W at 25°C ambient temperature. Key electrical parameters include a Gate Threshold Voltage (VGS(th)) range of 1.1 V to 3.0 V, Input Capacitance (Ciss) of 330 pF, and Total Gate Charge (Qg) of 5.3 nC.

Single FETs, MOSFETs Feature Summary

• Advanced trench process technology for high-density cell design
• Ultra-low on-resistance characteristics
• Enhancement mode operation

Single FETs, MOSFETs Applications

• Load Switch for Portable Devices
• DC/DC Converter

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision (AS-3150042, Rev F, revised 2022/01/16) against your design requirements. Confirm that the SOT-23 package dimensions and marking codes match your PCB footprint and assembly specifications. Ensure thermal management strategies account for the 1.2 W power dissipation rating at 25°C ambient temperature to maintain junction temperatures within the specified 150°C limit during operation.

Single FETs, MOSFETs Selection Notes

Select this component when a 100 V breakdown voltage and 2 A continuous current capability are required in a compact SOT-23 package. Consider the RDS(on) values at 10 V and 4.5 V gate drive levels to ensure compatibility with your control logic. Evaluate the 330 pF input capacitance and 5.3 nC total gate charge for switching speed requirements in DC/DC converter or load switch applications.

Single FETs, MOSFETs Part Context

The AS2324 belongs to the N-Channel Enhancement Mode MOSFET category produced by ANBON SEMICONDUCTOR (INT'L) LIMITED. This manufacturer specializes in power semiconductor devices for automotive and industrial markets, including Si and SiC-based products. The AS2324 utilizes advanced trench process technology to achieve low on-resistance in a small form factor suitable for portable electronics and power conversion circuits.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameter overlaps with potential alternatives before substitution.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current for the AS2324?

The maximum pulsed drain current (IDM) is 8 A.

What is the operating junction temperature range?

The junction temperature (TJ) can reach up to 150°C, and the storage temperature range is -55°C to +150°C.