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AS6004 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists ANBON SEMICONDUCTOR (INT'L) LIMITED. Its product description is P-CHANNEL ENHANCEMENT MODE MOSFE. Review the specifications below when checking this part for your BOM.
The AS6004 is a P-Channel Enhancement Mode MOSFET manufactured by ANBON SEMICONDUCTOR (INT'L) LIMITED. It features a -60V Drain-Source Voltage and a maximum continuous drain current of -4A. The device exhibits an on-resistance of 120mΩ at VGS=-10V and ID=-4A, or 170mΩ at VGS=-4.5V and ID=-3A. Packaged in SOT-23-3L, it supports a junction temperature up to 150°C and includes an integrated body diode with a forward voltage of -1.2V at IS=-4A.
Verify the specific manufacturer part number AS6004 against official datasheets to confirm electrical parameters and package dimensions. Ensure compatibility with system requirements regarding Drain-Source Voltage, Gate-Source Voltage limits, and thermal resistance specifications before integration into circuit designs.
Select this component for applications requiring a P-Channel MOSFET with a -60V rating and compact SOT-23-3L packaging. Consider the on-resistance values at different gate voltages when designing drive circuits for portable devices or DC/DC converters to ensure optimal efficiency and switching performance.
The AS6004 belongs to the power semiconductor category, specifically as a P-Channel Enhancement Mode MOSFET. Manufactured by ANBON SEMICONDUCTOR (INT'L) LIMITED, it utilizes advanced trench process technology to achieve low on-resistance within a small SOT-23-3L footprint, targeting portable electronics and power conversion systems.
Public confirmed substitute part numbers are not available in the provided documentation.
The maximum Drain-Source Voltage (VDS) is -60V.
The AS6004 is packaged in an SOT-23-3L configuration.
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AS6004 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists ANBON SEMICONDUCTOR (INT'L) LIMITED. Its product description is P-CHANNEL…
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