Single FETs, MOSFETs AS6004 product image

AS6004

$0.42
  • Description:P-CHANNEL ENHANCEMENT MODE MOSFE
  • Series:-
  • Mfr:ANBON SEMICONDUCTOR (INT'L) LIMITED
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:3b93b7ca95db Category: Brand:

  
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AS6004 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists ANBON SEMICONDUCTOR (INT'L) LIMITED. Its product description is P-CHANNEL ENHANCEMENT MODE MOSFE. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AS6004

  • Description:P-CHANNEL ENHANCEMENT MODE MOSFE
  • Series:-
  • Mfr:ANBON SEMICONDUCTOR (INT'L) LIMITED
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:120mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:930 pF @ 30 V
  • FET Feature:-
  • Power Dissipation (Max):1.5W (Ta)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23-3L
  • Package / Case:TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for AS6004

AS6004

Single FETs, MOSFETs Overview

The AS6004 is a P-Channel Enhancement Mode MOSFET manufactured by ANBON SEMICONDUCTOR (INT'L) LIMITED. It features a -60V Drain-Source Voltage and a maximum continuous drain current of -4A. The device exhibits an on-resistance of 120mΩ at VGS=-10V and ID=-4A, or 170mΩ at VGS=-4.5V and ID=-3A. Packaged in SOT-23-3L, it supports a junction temperature up to 150°C and includes an integrated body diode with a forward voltage of -1.2V at IS=-4A.

Single FETs, MOSFETs Feature Summary

  • Advanced trench process technology for high-density cell design
  • Ultra-low on-resistance characteristics
  • P-Channel Enhancement Mode operation

Single FETs, MOSFETs Applications

  • Load Switch for Portable Devices
  • DC/DC Converter

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturer part number AS6004 against official datasheets to confirm electrical parameters and package dimensions. Ensure compatibility with system requirements regarding Drain-Source Voltage, Gate-Source Voltage limits, and thermal resistance specifications before integration into circuit designs.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a P-Channel MOSFET with a -60V rating and compact SOT-23-3L packaging. Consider the on-resistance values at different gate voltages when designing drive circuits for portable devices or DC/DC converters to ensure optimal efficiency and switching performance.

Single FETs, MOSFETs Part Context

The AS6004 belongs to the power semiconductor category, specifically as a P-Channel Enhancement Mode MOSFET. Manufactured by ANBON SEMICONDUCTOR (INT'L) LIMITED, it utilizes advanced trench process technology to achieve low on-resistance within a small SOT-23-3L footprint, targeting portable electronics and power conversion systems.

Single FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

Single FETs, MOSFETs FAQ

What is the maximum Drain-Source Voltage for the AS6004?

The maximum Drain-Source Voltage (VDS) is -60V.

What package type does the AS6004 use?

The AS6004 is packaged in an SOT-23-3L configuration.

AS6004AS6004
$0.42
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