ATP204-TL-H

Single FETs, MOSFETs Overview

The ATP204-TL-H is a single N-channel enhancement mode power MOSFET manufactured by onsemi. It utilizes silicon technology and is housed in an ATPAK-3 surface-mount package. The device features a drain-source breakdown voltage of 40 V and supports a continuous drain current of 95 A. Its maximum on-resistance is specified at 6 mOhms. The component operates within a temperature range from -55 °C to +150 °C, with a power dissipation rating of 70 W.

Single FETs, MOSFETs Feature Summary

• Single N-channel configuration for high-current switching applications
• ATPAK-3 surface-mount package design for efficient thermal management
• Enhancement mode operation with low on-resistance characteristics

Single FETs, MOSFETs Applications

• Power distribution systems
• DC-DC converter circuits
• Motor control interfaces

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturing lot date code against the End-of-Life notification documents provided by onsemi. Confirm that the ATPAK-3 package dimensions match the target PCB footprint requirements. Ensure compliance with RoHS directives as indicated in the official datasheet before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component when a robust N-channel solution with high current capacity is required in a compact SMD form factor. Consider the 6 mOhm on-resistance for efficiency calculations. Verify that the 40 V rating aligns with the system's maximum operating voltage under all transient conditions.

Single FETs, MOSFETs Part Context

This part belongs to the ATP204 series of power MOSFETs from onsemi. It is designed for general-purpose switching applications requiring high reliability. The ATPAK-3 package provides a balance between electrical performance and thermal dissipation capabilities suitable for dense board layouts.

Single FETs, MOSFETs Replacement Considerations

Consult onsemi official documentation for qualified substitute part numbers. Verify pinout compatibility and electrical parameter equivalence before implementing any alternative components in existing designs.