ATP218-TL-H

Single FETs, MOSFETs Overview

The ATP218-TL-H is a single N-channel enhancement mode MOSFET manufactured by onsemi. It utilizes silicon technology and is housed in an ATPAK-3 surface-mount package. The device features a drain-source breakdown voltage of 30 V and supports a continuous drain current of 100 A. Its maximum drain-source on-resistance is specified at 3.8 mOhms.

Single FETs, MOSFETs Feature Summary

• High-current capability with 100 A continuous drain rating
• Low on-resistance for efficient power switching
• Single channel N-channel configuration

Single FETs, MOSFETs Applications

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized channels, as the ATP218-TL-H is listed as obsolete or end-of-life. Confirm RoHS compliance status via official documentation before integration. Ensure supply chain sources provide valid traceability records to mitigate risks associated with discontinued semiconductor components.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high current handling within a 30 V system. The low on-resistance minimizes conduction losses. Verify that the ATPAK-3 package fits the target PCB layout constraints. Consider thermal management requirements given the high current density capabilities of the device.

Single FETs, MOSFETs Part Context

This part belongs to the ATP218 series of power MOSFETs from onsemi. It shares the ATPAK-3 package form factor with other devices in the family but offers distinct electrical characteristics optimized for specific current and voltage levels within the low-voltage power switching segment.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided data. Consult manufacturer obsolescence notices for potential recommended replacements.