Single FETs, MOSFETs AUIRF1404Z product image

AUIRF1404Z

$3.66
  • Description:MOSFET N-CH 40V 160A TO220AB
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:05e689058944 Category: Brand:

  
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AUIRF1404Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 160A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRF1404Z

  • Description:MOSFET N-CH 40V 160A TO220AB
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:3.7mOhm @ 75A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:150 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:4340 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):200W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220AB
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for AUIRF1404Z

AUIRF1404Z

Single FETs, MOSFETs Overview

The AUIRF1404Z is an automotive-grade N-channel HEXFET power MOSFET featuring a maximum drain-source voltage of 40V and a continuous drain current of 180A at 25°C. It exhibits a maximum on-resistance of 3.7mΩ at VGS=10V and supports a junction temperature up to 175°C. The device includes avalanche ratings with single pulse energy up to 330mJ and total gate charge of 100nC typical.

Single FETs, MOSFETs Feature Summary

  • Automotive qualified per AEC-Q101 standards for high reliability
  • Advanced process technology enabling ultra-low on-resistance
  • Capable of repetitive avalanche operation up to maximum junction temperature

Single FETs, MOSFETs Applications

  • Automotive power switching applications
  • High efficiency motor control circuits
  • Low voltage DC-DC converter designs

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required, as the base model corresponds to TO-220AB. Confirm that the application environment meets the specified -55°C to +175°C operating range. Ensure thermal management strategies align with the provided junction-to-case resistance values to maintain device integrity under load.

Single FETs, MOSFETs Selection Notes

Select this component when low conduction losses are critical in 40V systems. The 175°C rating allows for higher thermal margins compared to standard 150°C devices. Consider the package limitation current of 160A alongside the silicon limit of 180A for accurate thermal modeling.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's HEXFET family, utilizing advanced processing techniques to minimize resistance per silicon area. It is designed specifically for automotive environments requiring robust performance and high reliability under varying thermal conditions.

Single FETs, MOSFETs Replacement Considerations

Check datasheets for IRF1404Z or IRL1404ZSPBF for potential pin-compatible alternatives. Verify that substitute parts meet the same AEC-Q101 qualification level and match the 3.7mΩ maximum on-resistance specification.

AUIRF1404ZAUIRF1404Z
$3.66
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