Single FETs, MOSFETs AUIRF2903ZS product image

AUIRF2903ZS

  • Description:MOSFET N-CH 30V 160A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:6054d8386d13 Category: Brand:

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AUIRF2903ZS is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 160A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRF2903ZS

  • Description:MOSFET N-CH 30V 160A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:2.4mOhm @ 75A, 10V
  • Vgs(th) (Max) @ Id:4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs:240 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:6320 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):231W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:D2PAK
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for AUIRF2903ZS

AUIRF2903ZS

Single FETs, MOSFETs Overview

The AUIRF2903ZS is an N-channel automotive-grade power MOSFET from Infineon Technologies, utilizing HEXFET technology. It features a maximum drain-source voltage (VDS) of 30 V and a maximum on-resistance (RDS(on)) of 2.4 mΩ. The device supports a continuous drain current (ID) of up to 180 A and operates at junction temperatures up to 175°C. Packaged in D2PAK (TO-263), it is designed for high-efficiency switching applications requiring low conduction losses and robust thermal performance.

Single FETs, MOSFETs Feature Summary

  • Automotive qualification compliant with AEC-Q101 standards for reliability
  • Advanced process technology enabling ultra-low on-resistance per silicon area
  • Designed for fast switching operations with enhanced thermal stability

Single FETs, MOSFETs Applications

  • Automotive power distribution systems
  • High-side and low-side load switches
  • DC-DC converter circuits in vehicle electronics

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix (e.g., ZS vs. ZL) against the official Infineon datasheet to ensure correct packaging and lead-free status. Confirm AEC-Q101 compliance requirements match your design specifications. Check for obsolescence notices or recommended new design alternatives if applicable. Ensure sourcing channels provide authentic components with traceable documentation.

Single FETs, MOSFETs Selection Notes

Select this component when a 30 V N-channel MOSFET with high current capability and automotive reliability is required. The low RDS(on) minimizes conduction losses in power paths. Consider the D2PAK package for surface-mount assembly with adequate heatsinking. Evaluate thermal resistance parameters against your system's heat dissipation capabilities to ensure operation within the 175°C limit.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's HEXFET family of power MOSFETs, specifically tailored for automotive environments. It represents a generation of devices optimized for lower on-resistance and higher efficiency compared to earlier iterations. The 'AU' prefix indicates automotive grade qualification, distinguishing it from standard industrial variants.

Single FETs, MOSFETs Replacement Considerations

Consult Infineon's official replacement guide for direct substitutes. Verify pin compatibility and electrical parameters such as VDS, ID, and RDS(on) before swapping. Ensure any alternative maintains AEC-Q101 certification if automotive use is mandated.

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