AUIRF3004WL

Single FETs, MOSFETs Overview

The AUIRF3004WL is a 40V N-channel HEXFET power MOSFET designed for automotive applications, housed in a Widelead TO-262 package. It features an ultra-low on-resistance with a maximum RDS(on) of 1.40mΩ at VGS=10V and a typical value of 1.27mΩ. The device supports a continuous drain current of 386A (silicon limited) or 240A (package limited) at TC=25°C. Key electrical parameters include a total gate charge (Qg) of up to 210nC, a junction-to-case thermal resistance (RθJC) of 0.40°C/W, and a maximum operating junction temperature of 175°C.

Single FETs, MOSFETs Feature Summary

• Widelead TO-262 package design providing over 50% lower lead resistance compared to traditional TO-262 packages
• Automotive qualification compliant with industry standards for reliability
• Repetitive avalanche rating allowed up to the maximum junction temperature
• Fast switching speed combined with low on-resistance for improved efficiency

Single FETs, MOSFETs Applications

• Automotive power distribution systems
• High-current motor control circuits
• Low-loss DC-DC conversion stages

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and package variant against the manufacturer's official documentation before procurement. Confirm that the component meets the required automotive quality standards and RoHS compliance specifications for the intended application environment. Ensure that the supply chain source provides valid traceability and authenticity guarantees for automotive-grade components.

Single FETs, MOSFETs Selection Notes

Select this component when designing systems requiring high current handling capabilities within a 40V voltage range. The Widelead package offers superior thermal performance and reduced parasitic inductance compared to standard packages. Consider the silicon-limited versus package-limited current ratings based on the specific PCB layout and cooling conditions available in the final assembly.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies (formerly International Rectifier). It utilizes advanced process technology to achieve low on-resistance and fast switching characteristics. The 'AU' prefix indicates automotive-grade qualification, ensuring suitability for harsh environments and long-term reliability requirements typical in vehicle electronics.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the 40V rating, N-channel configuration, and TO-262 WideLead package dimensions. Verify that any substitute component maintains comparable RDS(on), Qg, and thermal resistance values to ensure circuit performance parity.

Single FETs, MOSFETs FAQ

What is the difference between the silicon-limited and package-limited drain current?

The silicon-limited current (386A) represents the maximum current the die can handle thermally, while the package-limited current (240A) is constrained by the physical leads and packaging materials. Designers must ensure the system does not exceed the package limit under normal operating conditions.

Is repetitive avalanche operation permitted for this device?

Yes, the datasheet explicitly states that repetitive avalanche operation is allowed up to the maximum junction temperature (Tjmax), provided the thermal constraints are strictly observed.