AUIRF3415

Single FETs, MOSFETs Overview

The AUIRF3415 is an isolated N-channel power MOSFET from the HEXFET series, manufactured by Infineon Technologies. It features a TO-220AB package with integrated isolation for high-voltage gate drive applications. Key electrical parameters include a maximum drain-source voltage (VDS) of 150 V and a continuous drain current (ID) of 43 A at 25°C. The device exhibits a maximum on-resistance (RDS(on)) of 42 mΩ at VGS = 10 V. Total gate charge (QG) is typically 133.3 nC at 10 V, with a gate-drain charge (Qgd) of 65.3 nC. Thermal resistance junction-to-case (RthJC) is 0.75 K/W, supporting a maximum power dissipation of 200 W. The operating junction temperature range extends up to 175°C.

Single FETs, MOSFETs Feature Summary

• Integrated digital isolation barrier enables safe gate drive in high-common-mode voltage environments
• HEXFET technology provides low on-resistance for efficient power switching
• Robust thermal performance supports high-power dissipation in TO-220AB packaging

Single FETs, MOSFETs Applications

• Isolated gate drivers for motor control systems
• High-side switching in DC-DC converters
• Inverter bridges requiring galvanic isolation

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix (e.g., PBF) against the manufacturer's official datasheet to confirm lead-free compliance and exact pinout configuration. Ensure the selected variant matches the required isolation voltage rating and thermal management capabilities for the target application environment.

Single FETs, MOSFETs Selection Notes

Select this component when high-side switching with inherent gate-drive isolation is required. Compare RDS(on) and QG values against system efficiency targets. Verify that the TO-220AB package dimensions fit the mechanical constraints and that the 150 V rating exceeds the maximum circuit voltage with adequate margin.

Single FETs, MOSFETs Part Context

The AUIRF3415 belongs to Infineon's HEXFET family of power MOSFETs. It integrates the power switch with an isolation barrier, simplifying design compared to discrete MOSFETs plus separate isolators. This integration reduces board space and improves reliability in high-frequency switching applications.

Single FETs, MOSFETs Replacement Considerations

Check for direct replacements within the IRF3415 family or other Infineon isolated MOSFETs with matching VDS, ID, and RDS(on). Verify pin compatibility and isolation voltage ratings before substitution.