AUIRF3805STRL

Single FETs, MOSFETs Overview

The AUIRF3805STRL is an automotive-grade N-channel enhancement mode MOSFET from the Infineon HEXFET family. It features a 55 V drain-source voltage rating and supports high current handling with a maximum continuous drain current of 240 A at 25°C. The device utilizes a D2PAK-7 surface-mount package with seven pins, designed for robust thermal performance. Key electrical characteristics include a maximum on-resistance of 2.6 mΩ and a gate threshold voltage range between 2 V and 4 V. It operates within a temperature range of -55 °C to +175 °C junction temperature, ensuring reliability in demanding automotive environments.

Single FETs, MOSFETs Feature Summary

• Automotive qualification compliant with AEC-Q101 standards for enhanced reliability
• High current capability enabled by low on-state resistance technology
• Robust thermal management through D2PAK-7 surface mount packaging
• Wide operating temperature range suitable for harsh automotive conditions

Single FETs, MOSFETs Applications

• Automotive power distribution systems
• Motor control applications in vehicles
• High-side switching circuits
• Load management modules

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'STRL' against official Infineon documentation to confirm tape-and-reel packaging details. Ensure the component meets current AEC-Q101 automotive qualification requirements for your specific application. Cross-reference the datasheet revision date to confirm parameter consistency. Confirm availability status as automotive components may have extended lead times or lifecycle restrictions.

Single FETs, MOSFETs Selection Notes

Select this component when automotive reliability and high current capacity are required for 55 V systems. The D2PAK-7 package offers superior heat dissipation compared to standard TO-263 variants. Consider the 2.6 mΩ on-resistance for minimizing conduction losses in high-current paths. Verify that the gate drive voltage aligns with the 2 V to 4 V threshold range for optimal switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon HEXFET series, specifically tailored for automotive applications. It represents a high-performance solution within the 55 V N-channel MOSFET portfolio. The device integrates advanced silicon technology to achieve low on-resistance while maintaining high avalanche ruggedness. It is designed to replace previous generations of discrete MOSFETs in automotive power modules.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives such as IRF3805S variants if available. Verify that any substitute maintains the same D2PAK-7 footprint and thermal characteristics. Ensure the replacement meets the same AEC-Q101 automotive grade requirements. Compare on-resistance and gate charge values to ensure equivalent switching performance.