AUIRF7736M2TR

Single FETs, MOSFETs Overview

The AUIRF7736M2TR is an automotive-grade N-channel enhancement mode MOSFET utilizing DirectFET M4 packaging. It features a maximum drain-source voltage of 40 V and a typical on-resistance of 2.5 mΩ, with a maximum rating of 3.0 mΩ at VGS = 10V. The device supports a continuous drain current of 108 A (silicon limited) or 179 A (package limited) at TC = 25°C, and a pulsed drain current of 432 A. Total gate charge is typically 72 nC. Operating junction temperature ranges from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Advanced DirectFET M4 packaging enables dual-sided cooling for high thermal transfer efficiency.
• Optimized for automotive motor drive, DC-DC conversion, and heavy load applications.
• High repetitive avalanche capability ensures robustness and reliability in demanding environments.
• Low profile and small footprint facilitate integration into space-constrained power systems.

Single FETs, MOSFETs Applications

• Automotive motor drive systems
• High frequency DC-DC converters
• Heavy load applications on ICE platforms
• HEV and EV power systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix TR indicates tape and reel packaging with a standard quantity of 4800 units. Confirm that the component meets AEC-Q101 qualification standards required for automotive deployment. Ensure compatibility with vapor phase, infrared, or convection soldering processes as specified in application note AN-1035. Check for lead-free, RoHS, and halogen-free compliance before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when system requirements demand low on-resistance combined with high current handling in a compact form factor. The Dual-sided cooling capability makes it suitable for applications where thermal management is critical. Consider the 175°C operating temperature for high-temperature environments. Evaluate the 40V breakdown voltage against system rail voltages to ensure adequate safety margins during transient conditions.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's Automotive HEXFET Power MOSFET family integrated with DirectFET technology. It replaces older discrete packages by offering similar electrical performance in a footprint comparable to SO-8 or 5x6mm PQFN. The technology combines advanced silicon processing with direct board mounting capabilities to reduce parasitic parameters and improve switching speeds.

Single FETs, MOSFETs Replacement Considerations

Public confirmed substitute: AUIRL7736M2TR.