Single FETs, MOSFETs AUIRF9540N product image

AUIRF9540N

  • Description:MOSFET P-CH 100V 23A TO220
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:d992492e8f34 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

AUIRF9540N is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 100V 23A TO220. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRF9540N

  • Description:MOSFET P-CH 100V 23A TO220
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:117mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:97 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):140W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220AB
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for AUIRF9540N

AUIRF9540N

Single FETs, MOSFETs Overview

The AUIRF9540N is an automotive-grade, single P-channel HEXFET power MOSFET manufactured by Infineon Technologies. It utilizes advanced planar technology to achieve low on-resistance per silicon area. The device features a TO-220AB package with flange mount installation and three terminals (Gate, Drain, Source). Key electrical parameters include a drain-to-source breakdown voltage of -100V, a maximum continuous drain current of -23A at 25°C case temperature, and a maximum static drain-to-source on-resistance of 0.117Ω. It supports a junction temperature range from -55°C to +175°C and offers fully avalanche-rated performance with repetitive avalanche capability up to Tjmax.

Single FETs, MOSFETs Feature Summary

  • Automotive qualified according to AEC-Q101 standards for high reliability in vehicle environments
  • Fast switching speed combined with dynamic dV/dT rating for efficient operation
  • Fully avalanche rated allowing repetitive avalanche events up to the maximum junction temperature
  • Lead-free construction compliant with RoHS directives

Single FETs, MOSFETs Applications

  • Automotive power distribution systems
  • High-side load switching applications
  • Motor control circuits requiring ruggedized P-channel devices
  • General purpose power switching in automotive electronics

Single FETs, MOSFETs Procurement Notes

Verify that the specific part number matches the required automotive qualification level. Confirm the package type is TO-220AB and check for lead-free compliance if environmental regulations apply. Ensure the ordering suffix corresponds to the correct tube packaging quantity. Cross-reference the manufacturer's latest datasheet for any updates to absolute maximum ratings or thermal characteristics before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when an automotive-grade P-channel MOSFET is required for high-reliability applications. The device is suitable for designs needing fast switching and robust avalanche handling capabilities. Consider the TO-220AB package for through-hole mounting and effective heat dissipation via the drain tab. Verify that the system voltage does not exceed the -100V breakdown limit and that thermal management supports the specified operating temperature range.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. The 'AU' prefix indicates automotive qualification status, distinguishing it from standard industrial variants like the IRF9540N. It is designed to meet the stringent reliability requirements of the automotive industry while providing high efficiency and ruggedness typical of the HEXFET platform.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the automotive qualification and P-channel configuration. Verify pinout compatibility and ensure equivalent or superior electrical ratings for voltage, current, and on-resistance. Check thermal resistance values to confirm adequate heat dissipation in the existing design.

Single FETs, MOSFETs FAQ

Is the AUIRF9540N suitable for repetitive avalanche operations?

Yes, the device is fully avalanche rated and allows repetitive avalanche events up to the maximum junction temperature (Tjmax).

What is the maximum operating junction temperature for this MOSFET?

The maximum operating junction temperature is +175°C.

Does the AUIRF9540N meet automotive reliability standards?

Yes, it is specifically designed for automotive applications and is qualified according to the AEC-Q101 standard.

AUIRF9540NAUIRF9540N

Click on the inquiry

Recent News