AUIRFB3207

Single FETs, MOSFETs Overview

The AUIRFB3207 is an automotive-grade N-channel HEXFET Power MOSFET in a TO-220AB package. It features a 75V drain-source breakdown voltage and a maximum on-resistance of 4.5mΩ at VGS=10V. The device supports a continuous drain current of 170A (silicon limited) or 75A (package limited). It operates up to a junction temperature of 175°C with a thermal resistance of 0.50°C/W junction-to-case. Total gate charge is typically 180nC, and it allows repetitive avalanche operation.

Single FETs, MOSFETs Feature Summary

• Automotive qualified per AEC-Q101 standards
• Advanced process technology for ultra-low on-resistance
• Capable of repetitive avalanche operation up to Tjmax
• Lead-free and RoHS compliant construction

Single FETs, MOSFETs Applications

• Automotive power switching applications
• Low side load switching
• Motor control circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and packaging quantity against the manufacturer's official documentation before procurement. Confirm that the component meets the required automotive qualification standards for your specific application environment. Ensure compatibility with the intended mounting torque and thermal management requirements specified in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component when automotive reliability and high current handling are required. Consider the package-limited current of 75A versus the silicon-limited 170A based on thermal design. Evaluate the total gate charge and threshold voltage range to ensure compatibility with the driving circuitry and desired switching speeds.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies (formerly International Rectifier). It utilizes advanced processing techniques to achieve low on-resistance per silicon area. The 'AU' prefix indicates compliance with automotive industry requirements regarding product discontinuance and process change notification.

Single FETs, MOSFETs Replacement Considerations

Check for direct cross-references within the same HEXFET family or other automotive-grade 75V N-channel MOSFETs with similar RDS(on) and current ratings. Verify pinout compatibility and thermal characteristics if substituting with packages other than TO-220AB.

Single FETs, MOSFETs FAQ

Is the AUIRFB3207 suitable for repetitive avalanche applications?

Yes, the datasheet explicitly states that repetitive avalanche is allowed up to the maximum junction temperature (Tjmax).

What is the difference between the silicon-limited and package-limited drain current?

The silicon-limited current is 170A, representing the theoretical limit of the die. The package-limited current is 75A, which is the maximum current the TO-220AB package can safely handle under specified conditions.

Does the AU prefix indicate a different electrical function?

No, the AU prefix denotes adherence to automotive industry requirements for product discontinuance and process change notification, not a change in electrical function.