Single FETs, MOSFETs AUIRFB4410-IR product image

AUIRFB4410-IR

  • Description:AUTOMOTIVE HEXFET N CHANNEL
  • Series:HEXFET®
  • Mfr:International Rectifier
  • Package:Bulk

SKU:d8164b80f545 Category: Brand:

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AUIRFB4410-IR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists International Rectifier. Its product description is AUTOMOTIVE HEXFET N CHANNEL. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFB4410-IR

  • Description:AUTOMOTIVE HEXFET N CHANNEL
  • Series:HEXFET®
  • Mfr:International Rectifier
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:10mOhm @ 58A, 10V
  • Vgs(th) (Max) @ Id:4V @ 1.037mA
  • Gate Charge (Qg) (Max) @ Vgs:180 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:5150 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):200W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Through Hole
  • Supplier Device Package:PG-TO220-3-904
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for AUIRFB4410-IR

AUIRFB4410-IR

Single FETs, MOSFETs Overview

The AUIRFB4410-IR is an automotive-grade N-channel HEXFET power MOSFET manufactured by International Rectifier. It features a maximum drain-source voltage of 100 V and a continuous drain current of 97 A at 25 °C. The device utilizes a D2PAK surface-mount package with three pins. Key electrical parameters include a maximum on-resistance of 9 mΩ, a maximum gate-source voltage range of -20 V to +20 V, and a typical gate charge of 83 nC at 10 V. It supports a maximum power dissipation of 230 W and operates within a temperature range of -55 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

  • Automotive-grade ruggedness with improved gate, avalanche, and dynamic dV/dt capabilities
  • Enhanced body diode performance for high-speed switching applications
  • Fully characterized capacitance and avalanche safe operating area

Single FETs, MOSFETs Applications

  • High efficiency synchronous rectification in switch-mode power supplies
  • Uninterruptible power supply systems
  • Hard switched and high frequency circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'IR' against official International Rectifier documentation to confirm it denotes the correct automotive qualification or tape-and-reel configuration. Ensure the component matches the HEXFET family specifications for the intended thermal and electrical requirements. Cross-reference the datasheet revision date to validate parameter accuracy before integration into designs.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust automotive reliability and high current handling in a compact surface-mount form factor. The enhanced dV/dt and avalanche ruggedness make it suitable for demanding switching environments. Verify that the 100 V rating and 97 A current capacity align with the system's peak load and voltage stress conditions.

Single FETs, MOSFETs Part Context

This part belongs to the International Rectifier HEXFET power MOSFET family, designed for high-efficiency power management. The manufacturer, now part of Infineon Technologies, specializes in power control semiconductors. The AUIRFB4410 variant specifically targets automotive and industrial applications requiring enhanced durability compared to standard commercial grades.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution lists for equivalent HEXFET devices with matching voltage and current ratings. Verify pin compatibility and thermal characteristics when replacing with similar D2PAK packages from the same manufacturer.

AUIRFB4410-IRAUIRFB4410-IR

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