AUIRFP064N

Single FETs, MOSFETs Overview

The AUIRFP064N is an N-channel enhancement mode power MOSFET from the HEXFET family, manufactured by Infineon Technologies. It features a TO-247AC through-hole package with three terminals and a flange mount configuration. Key electrical parameters include a drain-source breakdown voltage of 55 V, a continuous drain current of 110 A at case temperature, and a maximum on-resistance of 8 mΩ at 10 V gate drive. The device supports a gate-source voltage range of ±20 V, with a typical gate charge of 170 nC. It operates within a junction temperature range of -55°C to +175°C and has a maximum power dissipation of 200 W.

Single FETs, MOSFETs Feature Summary

• Utilizes advanced processing techniques for extremely low on-resistance per silicon area
• Features ruggedized device design with fully avalanche-rated capability
• Provides fast switching speeds combined with high reliability
• Includes dynamic dv/dt rating for robust performance

Single FETs, MOSFETs Applications

• Power management systems
• DC-DC converters
• Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify component authenticity against Infineon specifications as this part number is listed as obsolete or end-of-life in multiple distributor databases. Confirm availability of qualified replacement components such as IRFP064NPBF or AUIRFP064N-204PBF if new production units are required. Ensure that any substitute parts meet the same automotive AEC-Q101 qualification standards and pinout compatibility for direct integration into existing designs.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high current handling at low voltage levels. The 55 V rating and 110 A current capacity make it suitable for synchronous rectification or low-side switching in power supplies. Consider the thermal performance provided by the TO-247AC package and the need for adequate heatsinking to manage the 200 W power dissipation rating under continuous operation conditions.

Single FETs, MOSFETs Part Context

The AUIRFP064N belongs to the HEXFET power MOSFET series developed by International Rectifier, now part of Infineon Technologies. This series is known for combining low on-resistance with fast switching characteristics. The 'AU' prefix typically denotes automotive-grade qualification, aligning with AEC-Q101 standards for reliability in harsh environments. It represents a fifth-generation technology implementation focusing on efficiency and ruggedness.

Single FETs, MOSFETs Replacement Considerations

Public confirmed substitutes include IRFP064NPBF and IRFP064N-204PBF. Verify pinout compatibility and thermal resistance values when transitioning between these variants.