AUIRFP2602

Single FETs, MOSFETs Overview

The AUIRFP2602 is an automotive-grade N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a 24V drain-to-source breakdown voltage and a maximum on-resistance of 1.6mΩ at VGS=10V and ID=180A. The device supports a silicon-limited continuous drain current of 380A and a package-limited current of 180A, with a pulsed drain current capability of 1580A. Total gate charge is typically 260nC. It operates within a junction temperature range of -55°C to +175°C and utilizes a TO-247AC through-hole package.

Single FETs, MOSFETs Feature Summary

• Automotive qualification compliant with AEC-Q101 standards for high reliability in vehicle environments.
• Advanced process technology enabling extremely low on-resistance per silicon area for improved efficiency.
• Fast switching speed combined with ruggedized design for reliable performance under dynamic conditions.
• Repetitive avalanche rating allowed up to the maximum junction temperature of 175°C.

Single FETs, MOSFETs Applications

• Automotive power distribution systems
• Low-voltage motor control applications
• High-current DC-DC converter stages

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and manufacturing date code upon receipt to ensure alignment with project requirements. Confirm that the component matches the official Infineon datasheet specifications regarding electrical parameters and package dimensions. Ensure storage and handling procedures comply with moisture sensitivity level guidelines to prevent damage prior to soldering.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust automotive-grade reliability and high current handling capabilities at low voltage levels. The TO-247AC package facilitates effective thermal management for high-power dissipation scenarios. Evaluate the trade-off between the 24V voltage rating and the low on-resistance to optimize system efficiency against cost constraints.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's HEXFET family of power MOSFETs, specifically engineered for automotive applications. It represents a specialized variant optimized for low-voltage, high-current operations where standard industrial components may not meet the stringent durability and environmental standards required by the automotive industry.

Single FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

Single FETs, MOSFETs FAQ

Is the AUIRFP2602 suitable for repetitive avalanche operation?

Yes, the device allows repetitive avalanche operation up to the maximum junction temperature of 175°C, as specified in the datasheet.

What is the maximum continuous drain current limited by the package?

The continuous drain current limited by the package is 180A at a case temperature of 25°C.