AUIRFP4110

$7.07

Description：MOSFET N-CH 100V 120A TO247AC
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:4eedc4bb1984 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRFP4110 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 120A TO247AC. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFP4110

Description：MOSFET N-CH 100V 120A TO247AC
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：4.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：210 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：9620 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：370W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-247AC
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for AUIRFP4110

AUIRFP4110

Single FETs, MOSFETs Overview

The AUIRFP4110 is an N-channel HEXFET power MOSFET designed for automotive applications. It features a TO-247AC package with a maximum drain-source voltage of 100 V and a maximum on-resistance of 4.5 mΩ at 10 V gate drive. The device supports a continuous drain current of 180 A (silicon limited) or 120 A (package limited), with a pulsed current rating of 670 A. Total gate charge is typically 150 nC, and the junction-to-case thermal resistance is 0.402 °C/W. Operating temperature ranges from -55 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

Automotive qualified per AEC-Q101 standards
Enhanced dV/dT and dI/dT capability
Repetitive avalanche allowed up to Tjmax
Ultra-low on-resistance technology

Single FETs, MOSFETs Applications

Automotive power switching
High-efficiency motor control
DC-DC converter stages

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm packaging format and quantity. Confirm that the component meets the required AEC-Q101 qualification level for your target application environment. Ensure thermal management designs account for the specified junction-to-case thermal resistance values under actual operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when high reliability in automotive environments is required alongside low conduction losses. Consider the 175°C junction temperature capability for robust thermal performance. Evaluate the package-limited current rating of 120 A against system peak loads to ensure safe operation within the TO-247AC physical constraints.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It utilizes advanced processing techniques to achieve low on-resistance per silicon area. The device is specifically engineered to meet the stringent requirements of automotive electronics while maintaining high efficiency and switching speed.

Single FETs, MOSFETs Replacement Considerations

Check datasheets for alternative parts offering similar 100 V ratings and comparable RDS(on) values. Verify pinout compatibility with the TO-247AC package. Ensure any substitute also holds relevant automotive qualifications if used in safety-critical systems.