AUIRFR2407

Single FETs, MOSFETs Overview

The AUIRFR2407 is an automotive-grade, single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It utilizes advanced planar technology to achieve low on-resistance and fast switching capabilities within a D-Pak (TO-252) surface-mount package. The device supports a maximum drain-source voltage of 75V and a continuous drain current of 42A at 25°C case temperature. Key electrical parameters include a typical RDS(on) of 21.8mΩ at VGS=10V, a total gate charge of 74nC, and a junction-to-case thermal resistance of 1.4°C/W. It operates reliably up to a maximum junction temperature of 175°C.

Single FETs, MOSFETs Feature Summary

• Automotive qualified per AEC-Q101 standards for enhanced reliability in vehicle environments
• Advanced planar technology provides low on-resistance per silicon area for high efficiency
• Fast switching speed combined with ruggedized design for efficient operation
• Fully avalanche rated with allowance for repetitive avalanche up to Tjmax

Single FETs, MOSFETs Applications

• Automotive power management systems
• General-purpose switching applications requiring automotive qualification
• Low-side switching configurations in vehicle electronics

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix when purchasing. The standard tube packaging corresponds to part number AUIRFR2407, while the tape and reel variant uses the suffix TRL (AUIRFR2407TRL). Confirm that the required quantity matches the selected packaging format before placing orders. Ensure compliance with RoHS directives as the component is lead-free.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring AEC-Q101 automotive qualification alongside robust switching performance. The 75V rating and 42A current capability suit low-voltage automotive loads. Consider the 1.4°C/W thermal resistance for heat dissipation requirements. Verify that the gate drive voltage aligns with the specified 10V threshold for optimal RDS(on) performance.

Single FETs, MOSFETs Part Context

This device belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It represents the automotive-grade variant of the IRFR2407 series, distinguished by its qualification under AEC-Q101 standards. The product line emphasizes durability and efficiency for demanding electronic environments.

Single FETs, MOSFETs Replacement Considerations

The base commercial equivalent is the IRFR2407. However, the IRFR2407 lacks the explicit AEC-Q101 automotive qualification granted to the AUIRFR2407. Substitution requires verifying if the application mandates automotive grade certification or if the extended industrial/consumer qualification suffices.

Single FETs, MOSFETs FAQ

Is the AUIRFR2407 suitable for repetitive avalanche operations?

Yes, the datasheet specifies that the device is fully avalanche rated and allows for repetitive avalanche energy up to the maximum junction temperature.

What is the peak diode recovery dv/dt rating?

The peak diode recovery dv/dt rating is specified as 5.0 V/ns under conditions where ISD is less than or equal to 25A and di/dt is less than or equal to 290A/μs.

How does the gate threshold voltage range affect operation?

The gate threshold voltage ranges from 2.0V to 4.0V at ID=250μA. This range ensures reliable turn-on characteristics across varying temperatures and manufacturing tolerances.