AUIRFR2407TRL

Description：MOSFET N-CH 75V 42A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:f762b921926f Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRFR2407TRL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 75V 42A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFR2407TRL

Description：MOSFET N-CH 75V 42A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：75 V
Current - Continuous Drain (Id) @ 25°C：42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：26mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：110 nC @ 10 V
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：2400 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：110W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for AUIRFR2407TRL

AUIRFR2407TRL

Single FETs, MOSFETs Overview

The AUIRFR2407 is an automotive-grade, single N-channel HEXFET power MOSFET utilizing advanced planar technology. It features a maximum drain-source voltage of 75V and a continuous drain current of 42A at 25°C case temperature. The device exhibits a typical on-resistance of 21.8mΩ and a maximum of 26mΩ at VGS=10V. Key electrical parameters include a total gate charge of 74nC (typical) and a dynamic dv/dt rating of 5.0V/ns. It supports a junction temperature range from -55°C to +175°C and is fully avalanche rated.

Single FETs, MOSFETs Feature Summary

Automotive qualified per AEC-Q101 standards for enhanced reliability in vehicle applications.
Advanced planar technology achieves low on-resistance per silicon area for high efficiency.
Fast switching capability combined with ruggedized device design.
Fully avalanche rated allowing repetitive avalanche operation up to the maximum junction temperature.

Single FETs, MOSFETs Applications

Automotive power switching circuits
High-efficiency motor control systems
General-purpose power management applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging format. The standard tube configuration corresponds to part number AUIRFR2407, while the tape and reel variant is designated as AUIRFR2407TRL. Ensure the procurement request explicitly states the required form factor to avoid fulfillment errors regarding quantity and handling specifications.

Single FETs, MOSFETs Selection Notes

Select this component when automotive qualification is mandatory for the target application. The 75V breakdown voltage and 42A current rating suit moderate-power switching tasks. Consider the 21.8mΩ typical on-resistance for conduction loss optimization. Verify that the thermal management solution accommodates the specified junction-to-case thermal resistance for the expected operating environment.

Single FETs, MOSFETs Part Context

This device belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It represents the automotive-qualified iteration of the IRFR2407 series, designed specifically to meet the rigorous reliability requirements of the automotive industry. The product utilizes Stripe Planar design techniques to optimize performance metrics such as on-resistance and switching speed within the D-Pak package.

Single FETs, MOSFETs Replacement Considerations

The base silicon specification aligns with the non-automotive IRFR2407. However, direct substitution requires confirming that the replacement part meets AEC-Q101 automotive qualification standards if the application demands them. Verify package compatibility and pinout alignment before implementation.