Single FETs, MOSFETs AUIRFR2905Z product image

AUIRFR2905Z

$0.82
  • Description:AUIRFR2905Z - 55V-60V N-CHANNEL
  • Series:HEXFET®
  • Mfr:International Rectifier
  • Package:Bulk

SKU:592924b1d70c Category: Brand:

  
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AUIRFR2905Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists International Rectifier. Its product description is AUIRFR2905Z - 55V-60V N-CHANNEL. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFR2905Z

  • Description:AUIRFR2905Z - 55V-60V N-CHANNEL
  • Series:HEXFET®
  • Mfr:International Rectifier
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):55 V
  • Current - Continuous Drain (Id) @ 25°C:42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:14.5mOhm @ 36A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:44 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1380 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):110W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:DPAK
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for AUIRFR2905Z

AUIRFR2905Z

Single FETs, MOSFETs Overview

The AUIRFR2905Z is an automotive-grade N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a 55V drain-source voltage rating and a continuous drain current of 42A. The device exhibits a maximum on-resistance of 18mΩ at 10V gate drive. Designed for high reliability, it supports junction temperatures up to 175°C and includes integrated avalanche energy capabilities. The component utilizes a TO-252AA (DPAK) surface-mount package.

Single FETs, MOSFETs Feature Summary

  • Automotive qualification compliant with AEC-Q101 standards for enhanced reliability in vehicle environments.
  • Integrated avalanche ruggedness allowing safe dissipation of repetitive avalanche energy during switching events.
  • High thermal performance supporting operation at junction temperatures up to 175°C.

Single FETs, MOSFETs Applications

  • Automotive power distribution systems
  • Motor control circuits
  • DC-DC converter stages

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix of the ordered part number against the manufacturer's official datasheet to confirm exact electrical tolerances and packaging specifications. Ensure the component meets the required AEC-Q101 grade if automotive certification is mandatory for the design. Cross-reference the manufacturer code to distinguish between original International Rectifier and subsequent Infineon production batches.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust automotive-grade N-channel switching with moderate voltage ratings. The low on-resistance minimizes conduction losses in power paths. Consider the thermal management requirements associated with the DPAK package and the 175°C operating limit. Evaluate the avalanche energy rating against potential inductive load spikes in the target application.

Single FETs, MOSFETs Part Context

This device belongs to the HEXFET family of power MOSFETs, known for optimized cell geometry for low resistance. The 'AU' prefix typically denotes automotive qualification under AEC-Q101 standards. It represents a transition from the legacy International Rectifier brand to Infineon Technologies manufacturing processes while maintaining functional compatibility.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout and parameter compatibility before considering any alternative devices.

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