AUIRFR3504Z

Single FETs, MOSFETs Overview

The AUIRFR3504Z is an N-channel enhancement mode HEXFET power MOSFET designed for automotive applications. It features a maximum drain-source voltage of 40 V and a silicon-limited continuous drain current of 77 A at 25°C, with package limitations capping the current at 42 A. The device exhibits a maximum on-resistance of 9.0 mΩ at VGS = 10V and ID = 42A. It supports a maximum power dissipation of 90 W and operates within a junction temperature range of -55°C to +175°C. Key dynamic parameters include a total gate charge of 30 nC (typical) and fast switching times.

Single FETs, MOSFETs Feature Summary

• Automotive qualified per AEC-Q101 standards
• Advanced process technology for low on-resistance
• Supports repetitive avalanche operation up to Tjmax
• Fast switching speed with low thermal resistance

Single FETs, MOSFETs Applications

• Automotive electronic systems
• High-efficiency switching applications
• Power management circuits requiring high reliability

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix required for your manufacturing needs, as the base part number is available in tube packaging while tape and reel options exist. Confirm that the component meets the necessary automotive qualification standards for your target application environment. Ensure compatibility with standard D-Pak mounting techniques and verify lead-free RoHS compliance requirements are met for your region.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust automotive-grade performance with low conduction losses. The 40V rating suits 12V and 24V automotive systems. Consider the package-limited current of 42A for thermal design constraints rather than the higher silicon-limited value. The ability to handle repetitive avalanche events makes it suitable for inductive load switching where transient energy absorption is critical.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's HEXFET family, utilizing advanced processing techniques to minimize on-resistance per silicon area. It is specifically engineered to meet the rigorous demands of automotive electronics, combining high efficiency with reliable operation under extreme temperatures. The D-Pak package provides a balance of electrical performance and thermal management capabilities.

Single FETs, MOSFETs Replacement Considerations

Check datasheets for alternative N-channel 40V MOSFETs with similar RDS(on) and current ratings. Verify pinout compatibility with the D-Pak (TO-252) footprint. Ensure any substitute also meets AEC-Q101 automotive qualification if used in automotive contexts. Compare avalanche energy ratings and thermal resistance values to maintain system reliability.