Single FETs, MOSFETs AUIRFR3504ZTRL product image

AUIRFR3504ZTRL

  • Description:MOSFET N-CH 40V 42A DPAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)

SKU:84579ee42b61 Category: Brand:

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AUIRFR3504ZTRL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 42A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFR3504ZTRL

  • Description:MOSFET N-CH 40V 42A DPAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:9mOhm @ 42A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:1510 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):90W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-252AA (DPAK)
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for AUIRFR3504ZTRL

AUIRFR3504ZTRL

Single FETs, MOSFETs Overview

The AUIRFR3504ZTRL is an automotive-grade N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a D-Pak (TO-252) surface-mount package and utilizes advanced silicon processing to achieve a maximum drain-source on-resistance of 9.0 mΩ at VGS = 10V. The device supports a continuous drain current of 77A (silicon limited) or 42A (package limited) and withstands a pulsed drain current of 310A. It operates with a breakdown voltage of 40V, a gate-source voltage range of ±20V, and a junction temperature range from -55°C to +175°C. Key electrical characteristics include a total gate charge of 30 nC typ., turn-on delay of 15 ns, and rise time of 74 ns.

Single FETs, MOSFETs Feature Summary

  • Automotive qualified per AEC-Q101 standards for high reliability in vehicle electronics.
  • Advanced process technology enables extremely low on-resistance per silicon area.
  • Capable of repetitive avalanche operation up to the maximum junction temperature.
  • Designed for fast switching speeds to minimize switching losses.

Single FETs, MOSFETs Applications

  • Automotive electronic systems requiring robust power switching.
  • High-efficiency DC/DC converter circuits.
  • Motor control applications utilizing low-voltage power stages.

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm that the specific ordering suffix matches the required tape and reel packaging format. Ensure compliance with RoHS directives and check for any end-of-life notifications prior to finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits that demand automotive qualification and high thermal stability. The low on-resistance makes it suitable for applications prioritizing conduction loss reduction. Evaluate the package-limited current rating against the system's peak load requirements to ensure safe operation within the specified thermal constraints.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It represents a specialized variant optimized for automotive environments, distinguishing itself from standard industrial components through rigorous qualification testing. The ZTRL suffix indicates the specific tape and reel packaging configuration used for automated assembly processes.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the 40V rating, D-Pak package, and automotive qualification level. Verify that substitute devices offer comparable on-resistance and avalanche energy ratings to maintain circuit performance and reliability without redesigning the thermal management system.

Single FETs, MOSFETs FAQ

Is the AUIRFR3504ZTRL suitable for repetitive avalanche applications?

Yes, the datasheet explicitly states that repetitive avalanche operation is allowed up to the maximum junction temperature (Tjmax).

What is the maximum operating junction temperature for this MOSFET?

The maximum operating junction temperature is +175°C.

How does the package limitation affect the continuous drain current?

While the silicon limit allows for 77A, the physical package limits the continuous drain current to 42A at a case temperature of 25°C.

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