AUIRFR3607

Description：MOSFET N-CH 75V 56A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:ef3bf21d502d Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRFR3607 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 75V 56A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFR3607

Description：MOSFET N-CH 75V 56A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：75 V
Current - Continuous Drain (Id) @ 25°C：56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：9mOhm @ 46A, 10V
Vgs(th) (Max) @ Id：4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs：84 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3070 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：140W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for AUIRFR3607

AUIRFR3607

Single FETs, MOSFETs Overview

The AUIRFR3607 is an automotive-grade HEXFET Power MOSFET manufactured by Infineon Technologies. It features a single N-channel configuration housed in a D-Pak (TO-252-3) surface-mount package. The device supports a drain-to-source voltage of 75V and delivers a continuous drain current of 80A, limited by silicon characteristics at 25°C case temperature. Its maximum static drain-to-source on-resistance is 9.0mΩ, with a typical value of 7.34mΩ measured at VGS=10V. The component operates within a junction temperature range of -55°C to +175°C and includes a lead-free, RoHS-compliant construction.

Single FETs, MOSFETs Feature Summary

Specifically designed for automotive applications utilizing advanced processing techniques to achieve low on-resistance per silicon area.
Features fast switching speed and improved repetitive avalanche rating for reliable operation under harsh conditions.
Supports a 175°C junction operating temperature and allows repetitive avalanche up to Tjmax.

Single FETs, MOSFETs Applications

Automotive power switching circuits
High efficiency synchronous rectification in SMPS
Uninterruptible power supply systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging format and quantity. The base part number indicates the core electrical specifications, while suffixes such as TR or TRR denote tape and reel variations. Ensure the procurement channel provides traceability to original manufacturing standards required for automotive qualification compliance.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust automotive-grade reliability and high thermal performance. The D-Pak package offers a balance between current handling capability and surface-mount convenience. Consider the 9.0mΩ maximum on-resistance for conduction loss calculations and verify that the gate drive voltage aligns with the specified threshold and full enhancement requirements.

Single FETs, MOSFETs Part Context

This component belongs to the HEXFET Power MOSFET family produced by Infineon Technologies. It shares core electrical parameters with non-automotive variants like the IRFR3607 but adheres to stricter automotive qualification standards. The 'AU' prefix designates products meeting specific industry requirements regarding product discontinuance and process change notifications.

Single FETs, MOSFETs Replacement Considerations

The IRFR3607TRPBF serves as a technical substitute with identical electrical ratings and pinout. However, it lacks the explicit automotive qualification designation found in the AUIRFR3607 series. Verify if the application environment mandates the specific automotive reliability standards associated with the AU prefix before substituting.