AUIRFR4104TRL

Single FETs, MOSFETs Overview

The AUIRFR4104TRL is an N-channel enhancement mode MOSFET from the Infineon HEXFET series, utilizing OptiMOS technology. It features a maximum drain-source voltage of 40 V and a continuous drain current of 119 A at 25°C. The device has a typical on-resistance of 5.5 mΩ and a gate charge of 59 nC at 10 V. It operates within a temperature range of -55°C to +175°C with a power dissipation of 140 W. The component is housed in a DPAK (TO-252) surface-mount package.

Single FETs, MOSFETs Feature Summary

• Integrated digital isolation barrier for high dv/dt immunity
• OptiMOS technology for low conduction losses
• High thermal stability up to 175°C junction temperature

Single FETs, MOSFETs Applications

• Motor control systems
• Power supply circuits
• Synchronous rectification

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'TRL' against official Infineon documentation to confirm reel specifications and tape-and-reel packaging details. Ensure the ordering part number matches the exact datasheet revision required for your design. Confirm that the integrated digital isolator meets the necessary safety standards for your application environment.

Single FETs, MOSFETs Selection Notes

Select this component when high-speed switching and electrical isolation are required in a single package. The integrated isolator simplifies layout by eliminating external gate drive transformers or optocouplers. Consider the thermal performance and package constraints when designing the PCB heat dissipation path.

Single FETs, MOSFETs Part Context

This part belongs to the AUIRF series, which combines standard power MOSFETs with digital isolation. It is designed for applications requiring robust noise immunity and simplified gate drive circuitry. The HEXFET platform provides a balance of low on-resistance and fast switching speeds.

Single FETs, MOSFETs Replacement Considerations

Check for direct replacements such as IRFR4104TRPBF if isolation is not needed. Verify pinout compatibility and electrical parameters before substituting with other isolated MOSFETs from different manufacturers.