AUIRFR4105Z

Description：MOSFET N-CH 55V 20A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:d3be5e82648d Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRFR4105Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 20A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFR4105Z

Description：MOSFET N-CH 55V 20A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：24.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：27 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：740 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：48W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for AUIRFR4105Z

AUIRFR4105Z

Single FETs, MOSFETs Overview

The AUIRFR4105Z is an N-channel HEXFET power MOSFET with a 55V drain-source breakdown voltage and a maximum continuous drain current of 30A at 25°C case temperature. It features a maximum on-resistance of 24.5mΩ at VGS=10V and ID=18A, with a gate threshold voltage ranging from 2.0V to 4.0V. The device supports a junction temperature up to 175°C, offers a single pulse avalanche energy of 29mJ (tested value 46mJ), and has a total gate charge of 18nC typical. It is housed in a D-Pak (TO-252AA) package.

Single FETs, MOSFETs Feature Summary

Automotive qualified per AEC-Q101 standards for high reliability applications
Advanced process technology achieving ultra-low on-resistance per silicon area
Capable of repetitive avalanche operation up to the maximum junction temperature
Fast switching characteristics combined with a 175°C operating temperature rating

Single FETs, MOSFETs Applications

Automotive power distribution systems
High-efficiency motor control circuits
General purpose switching applications requiring automotive grade components

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and package type against the manufacturer's official documentation before procurement. Confirm that the component meets the required AEC-Q101 qualification level for your target application. Ensure compatibility with the intended thermal management solution given the specified power dissipation ratings.

Single FETs, MOSFETs Selection Notes

Select this component when automotive qualification is mandatory and low conduction losses are critical. Evaluate the thermal resistance parameters against your system's cooling capabilities. Consider the gate charge requirements for your driver circuit to ensure efficient switching performance within the desired frequency range.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon HEXFET family, utilizing advanced processing techniques to minimize on-resistance. It is designed specifically for robust performance in demanding environments, combining high current handling with fast switching speeds. The device represents a balance between efficiency and ruggedness suitable for industrial and automotive sectors.

Single FETs, MOSFETs Replacement Considerations

Check for direct replacements such as IRFR4105ZTRLPBF or AUIRFU4105Z based on package preference. Verify pinout compatibility and electrical parameter alignment before substitution.