AUIRFR4105ZTRL

$0.74

Description：MOSFET N-CH 55V 20A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:027bdb75bcaa Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRFR4105ZTRL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 20A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFR4105ZTRL

Description：MOSFET N-CH 55V 20A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：24.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：27 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：740 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：48W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for AUIRFR4105ZTRL

AUIRFR4105ZTRL

Single FETs, MOSFETs Overview

The AUIRFR4105ZTRL is an automotive-grade N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a D-Pak (TO-252AA) surface-mount package and utilizes advanced process technology to achieve ultra-low on-resistance. The device supports a maximum drain-source voltage of 55V and a continuous drain current of 30A at 25°C case temperature. Key electrical parameters include a maximum RDS(on) of 24.5mΩ at VGS=10V, a total gate charge of 27nC, and a single pulse avalanche energy rating of 29mJ. It operates within a junction temperature range of -55°C to +175°C and meets AEC-Q101 qualification standards.

Single FETs, MOSFETs Feature Summary

Automotive qualified per AEC-Q101 standards for high reliability in vehicle electronics.
Advanced HEXFET processing enables extremely low on-resistance per silicon area.
Capable of repetitive avalanche operation up to the maximum junction temperature.
Designed for fast switching speeds with improved thermal performance.

Single FETs, MOSFETs Applications

Automotive power distribution systems
High-efficiency DC-DC converters
Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'TRL' corresponds to the Tape and Reel packaging format containing 3000 units as defined in the manufacturer's ordering table. Confirm that the component meets the required AEC-Q101 qualification level for your specific automotive application environment before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust automotive-grade reliability combined with low conduction losses. The 55V rating and 30A current capability suit medium-power switching tasks. Ensure the thermal design accommodates the junction-to-case thermal resistance of 3.12°C/W to maintain safe operating temperatures under load.

Single FETs, MOSFETs Part Context

This part belongs to the AUIRF series of automotive power MOSFETs from Infineon Technologies. It shares the same die characteristics as the non-automotive IRFR4105Z but undergoes stricter qualification processes. The 'U' variant denotes the I-Pak package, while the 'R' variant indicates the D-Pak package used in this model.

Single FETs, MOSFETs Replacement Considerations

The base die is compatible with the IRFR4105ZTRPBF for general industrial use, though it lacks automotive qualification. For direct automotive replacements, verify equivalent AEC-Q101 certified parts with matching 55V ratings and similar RDS(on) values from the manufacturer's portfolio.