AUIRFR5305TR

$3.12

Description：MOSFET P-CH 55V 31A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:526cad9c9c78 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRFR5305TR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 55V 31A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFR5305TR

Description：MOSFET P-CH 55V 31A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：65mOhm @ 16A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：63 nC @ 10 V
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：1200 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for AUIRFR5305TR

AUIRFR5305TR

Single FETs, MOSFETs Overview

The AUIRFR5305TR is an automotive-grade P-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a D-Pak (TO-252AA) surface-mount package with three pins. Key electrical parameters include a drain-source breakdown voltage of -55 V, a maximum continuous drain current of -31 A at 25°C case temperature, and a maximum on-resistance of 0.065 Ω at VGS = -10 V. The device supports a junction temperature range from -55°C to +175°C, offers a single-pulse avalanche energy rating of 280 mJ, and complies with RoHS standards.

Single FETs, MOSFETs Feature Summary

Automotive qualified according to AEC-Q101 standards for high reliability in vehicle applications
Advanced planar technology enables low on-resistance per silicon area for improved efficiency
Fully avalanche rated with repetitive avalanche capability allowed up to the maximum junction temperature
Fast switching characteristics combined with dynamic dv/dt rating for robust performance

Single FETs, MOSFETs Applications

Automotive power management systems
High-side switching circuits
DC/DC converters
Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify that the ordering suffix TR corresponds to the tape and reel packaging format required for automated assembly processes. Confirm the specific automotive qualification level meets project requirements, as industrial and consumer grades are granted by extension of the higher automotive standard. Ensure component authenticity through authorized distribution channels to maintain compliance with safety and quality specifications.

Single FETs, MOSFETs Selection Notes

Select this component when designing for automotive environments requiring ruggedized P-channel switching. The -55 V rating and -31 A current capacity suit moderate voltage DC systems. Evaluate thermal management needs based on the 1.4 °C/W junction-to-case resistance. Consider the 63 nC gate charge for driver selection to optimize switching losses while maintaining fast transition times within the specified operating temperature range.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs utilizing cellular planar design techniques. The base model AUIRFR5305 is available in tube packaging, while the TR suffix indicates tape and reel configuration. The automotive grade designation signifies adherence to stricter reliability criteria compared to standard industrial variants, ensuring durability under varying thermal and electrical stresses typical in vehicular electronics.