Single FETs, MOSFETs AUIRFR540Z product image

AUIRFR540Z

  • Description:MOSFET N-CH 100V 35A DPAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:939dc62d998d Category: Brand:

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AUIRFR540Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 35A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFR540Z

  • Description:MOSFET N-CH 100V 35A DPAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:28.5mOhm @ 21A, 10V
  • Vgs(th) (Max) @ Id:4V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs:59 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1690 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):91W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:DPAK
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for AUIRFR540Z

AUIRFR540Z

Single FETs, MOSFETs Overview

The AUIRFR540Z is an automotive-grade N-channel HEXFET power MOSFET with a 100V drain-source voltage rating and a maximum continuous drain current of 35A at 25°C case temperature. It features a typical on-resistance of 22.5mΩ, reaching a maximum of 28.5mΩ at VGS=10V. The device supports a junction temperature range from -55°C to +175°C and includes improved repetitive avalanche ratings for robust operation.

Single FETs, MOSFETs Feature Summary

  • Automotive qualification compliant with AEC-Q101 standards
  • Optimized low on-resistance per silicon area using advanced processing techniques
  • Enhanced reliability through fast switching speeds and improved repetitive avalanche capability

Single FETs, MOSFETs Applications

  • Automatic Voltage Regulators (AVR)
  • Solenoid Injection systems
  • Body Control modules
  • Low Power Automotive Applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm the correct packaging format, such as tube or tape and reel quantities. Ensure that the component meets the required automotive qualification standards before integration into safety-critical designs.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high reliability in automotive environments. Consider its thermal characteristics and avalanche energy limits for applications involving inductive loads. Verify compatibility with gate drive voltages and ensure adequate heat dissipation for the expected operating conditions.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's HEXFET family, specifically tailored for automotive electronics. It utilizes advanced processing techniques to achieve low on-resistance while maintaining high durability. The device is designed to operate efficiently under the demanding conditions typical of vehicle electrical systems.

Single FETs, MOSFETs Replacement Considerations

Direct replacements include IRFR540Z and IRFR540ZTRPBF. When substituting, verify that the alternative part meets the same automotive qualification requirements and matches the critical electrical parameters such as breakdown voltage and on-resistance.

Single FETs, MOSFETs FAQ

What is the maximum repetitive avalanche energy rating?

The device features improved repetitive avalanche ratings, with single pulse avalanche energy tested up to 75 mJ.

Is this component suitable for harsh automotive environments?

Yes, it is qualified according to AEC-Q101 standards and supports a junction temperature range up to 175°C.

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