AUIRFR5505TRL

Description：MOSFET P-CH 55V 18A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:2fc2dcda69f4 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRFR5505TRL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 55V 18A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFR5505TRL

Description：MOSFET P-CH 55V 18A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：110mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：32 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：650 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：57W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for AUIRFR5505TRL

AUIRFR5505TRL

Single FETs, MOSFETs Overview

The AUIRFR5505TRL is an automotive-grade P-channel HEXFET power MOSFET from Infineon Technologies, designed for surface-mount applications in the D-Pak (TO-252AA) package. It features a drain-source voltage rating of -55V and a continuous drain current of -18A at 25°C case temperature. The device utilizes advanced planar technology to achieve a maximum on-resistance of 0.11Ω at VGS = -10V. Key electrical characteristics include a total gate charge of 32nC and a single-pulse avalanche energy rating of 150mJ. It operates within a junction temperature range of -55°C to +150°C and meets AEC-Q101 qualification standards.

Single FETs, MOSFETs Feature Summary

Automotive qualified per AEC-Q101 standards for high reliability
Fully avalanche rated with repetitive avalanche capability up to Tjmax
Fast switching performance enabled by advanced planar technology
Low on-resistance optimized for efficient power management

Single FETs, MOSFETs Applications

Automotive cellular systems
General automotive power switching circuits
High-reliability industrial load switches

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'TRL' corresponds to the Tape and Reel packaging format containing 3000 units per reel. Confirm that the component meets the required AEC-Q101 automotive grade specifications for your target application environment. Ensure compatibility with standard SMT assembly processes for the D-Pak package.

Single FETs, MOSFETs Selection Notes

Select this component when designing automotive or high-reliability circuits requiring a ruggedized P-channel MOSFET. The device is suitable for applications demanding fast switching speeds and robustness against inductive load transients due to its avalanche rating. Consider the thermal resistance and power dissipation limits relative to your system's cooling capabilities.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs, which are characterized by low on-resistance and fast switching speeds. The 'AU' prefix indicates automotive qualification, while the 'TR' suffix denotes tape and reel packaging. It is functionally related to the IRFR5505 series but includes enhanced reliability testing for automotive environments.

Single FETs, MOSFETs Replacement Considerations

Direct replacements include the IRFR5505TRL for non-automotive applications. For through-hole mounting equivalents, consider the IRFU5505 series. Verify pinout compatibility and ensure the substitute meets the required voltage and current ratings.