Single FETs, MOSFETs AUIRFS4127 product image

AUIRFS4127

  • Description:MOSFET N-CH 200V 72A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:b668f411612f Category: Brand:

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AUIRFS4127 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 200V 72A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFS4127

  • Description:MOSFET N-CH 200V 72A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):200 V
  • Current - Continuous Drain (Id) @ 25°C:72A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:22mOhm @ 44A, 10V
  • Vgs(th) (Max) @ Id:5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:150 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:5380 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):375W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-TO263-3
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for AUIRFS4127

AUIRFS4127

Single FETs, MOSFETs Overview

The AUIRFS4127 is an automotive-grade N-channel HEXFET power MOSFET in a D2PAK (TO-263) package. It features a 200V drain-source breakdown voltage and a maximum continuous drain current of 72A at 25°C case temperature. The device exhibits a typical on-resistance of 18.6mΩ, with a maximum limit of 22mΩ at VGS=10V. Total gate charge is typically 100nC. It supports a junction temperature range from -55°C to +175°C and includes repetitive avalanche capability.

Single FETs, MOSFETs Feature Summary

  • Automotive qualified per AEC-Q101 standards for high reliability
  • Advanced process technology enabling ultra-low on-resistance
  • Fast switching speed with improved repetitive avalanche rating
  • Designed for efficient operation up to 175°C junction temperature

Single FETs, MOSFETs Applications

  • Automotive power distribution systems
  • High-efficiency motor control applications
  • General purpose power switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix (e.g., TRLPBF vs PBF) against the manufacturer's official ordering guide to confirm packaging type. Confirm that the required qualification level matches the automotive grade specifications documented in the datasheet. Ensure thermal management designs account for the specified junction-to-case thermal resistance values under intended operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a 200V rated N-channel MOSFET with low conduction losses is required for automotive environments. The D2PAK package provides a balance between current handling capacity and surface mount convenience. Consider the 175°C operating limit for high-temperature applications where standard industrial grades may be insufficient.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's HEXFET family of power MOSFETs. It utilizes advanced processing techniques to minimize silicon area resistance while maintaining robustness. The automotive qualification extends industrial and consumer reliability standards, making it suitable for demanding vehicle electronics and infrastructure applications.

Single FETs, MOSFETs Replacement Considerations

Check pinout compatibility if substituting with other TO-263 packages. Verify that alternative parts meet or exceed the 200V Vds and 72A Id requirements. Ensure replacement components also satisfy AEC-Q101 automotive qualification if the application mandates it.

AUIRFS4127AUIRFS4127

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