Single FETs, MOSFETs AUIRFS4310Z product image

AUIRFS4310Z

  • Description:MOSFET N-CH 100V 120A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:a1ca195f16ff Category: Brand:

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AUIRFS4310Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 120A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFS4310Z

  • Description:MOSFET N-CH 100V 120A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:6mOhm @ 75A, 10V
  • Vgs(th) (Max) @ Id:4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs:170 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:6860 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):250W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:D2PAK
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for AUIRFS4310Z

AUIRFS4310Z

Single FETs, MOSFETs Overview

The AUIRFS4310Z is an automotive-grade N-channel enhancement-mode MOSFET from Infineon's HEXFET family. It features a D2PAK (TO-263) surface-mount package with three pins. Key electrical parameters include a drain-source voltage of 100 V, a continuous drain current of 97 A at 25°C, and a maximum on-resistance of 9 mΩ at 10 V gate drive. The device supports a power dissipation of 230 W, operates within a temperature range of -55°C to +175°C, and carries AEC-Q100 qualification.

Single FETs, MOSFETs Feature Summary

  • Automotive-grade reliability certified under the AEC-Q100 standard for robust performance in vehicle environments.
  • Optimized low on-resistance design enables efficient power switching and reduced conduction losses.
  • Enhanced thermal management capabilities support high-power density applications up to 175°C junction temperature.

Single FETs, MOSFETs Applications

  • Automotive power distribution systems
  • High-side and low-side load switches
  • DC-DC converter circuits

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized channels due to widespread counterfeiting risks. Confirm that the specific suffix matches the required automotive grade and packaging format. Ensure compliance with RoHS directives and check for end-of-life status before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component when designing for automotive environments requiring AEC-Q100 certification. The 100V rating and 9mΩ resistance balance efficiency with cost-effectiveness. Verify that the D2PAK footprint aligns with PCB layout constraints and thermal requirements.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's HEXFET series, designed for general-purpose power switching. It serves as the automotive-qualified variant of the IRFS4310Z, sharing similar electrical characteristics but adhering to stricter automotive quality standards.

Single FETs, MOSFETs Replacement Considerations

The IRFS4310Z is the non-automotive equivalent with identical electrical specifications. For direct replacements, verify pinout compatibility and ensure the substitute meets the required AEC-Q100 qualification if automotive use is intended.

Single FETs, MOSFETs FAQ

Is the AUIRFS4310Z qualified for automotive applications?

Yes, it is explicitly qualified according to the AEC-Q100 standard for automotive grade components.

What is the maximum operating junction temperature?

The device supports a maximum junction temperature of 175°C.

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