Single FETs, MOSFETs AUIRFS4410Z product image

AUIRFS4410Z

  • Description:MOSFET N-CH 100V 97A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:3539ca4a41fb Category: Brand:

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AUIRFS4410Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 97A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFS4410Z

  • Description:MOSFET N-CH 100V 97A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:97A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:9mOhm @ 58A, 10V
  • Vgs(th) (Max) @ Id:4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs:120 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:4820 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):230W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-TO263-3
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for AUIRFS4410Z

AUIRFS4410Z

Single FETs, MOSFETs Overview

The AUIRFS4410Z is a 100V N-channel automotive-grade power MOSFET utilizing Gen 10.7 technology in a D2PAK surface-mount package. It features a maximum drain-source voltage of 100 V and a continuous drain current of 97 A at 25°C. The device exhibits a maximum on-resistance of 9 mΩ at 10 V gate drive, with a typical total gate charge of 83 nC. Rated for a junction temperature up to 175°C and operating range from -55°C to 175°C, it offers a thermal resistance (junction-to-case) of 0.65 K/W and maximum power dissipation of 230 W.

Single FETs, MOSFETs Feature Summary

  • Automotive qualification compliant with AEC-Q100 standards for reliability in vehicle environments.
  • Optimized switching performance through low gate charge characteristics suitable for high-frequency applications.
  • Robust avalanche capability designed to withstand transient energy events common in automotive loads.

Single FETs, MOSFETs Applications

  • Synchronous rectification in DC-DC converters
  • High-side and low-side power switching
  • Motor control circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and manufacturing date code upon request, as Infineon may update component markings or revision levels without altering the core electrical specifications. Confirm that the supplier provides traceability documentation required for automotive supply chains. Ensure the received components match the exact part number designation to avoid compatibility issues with existing PCB layouts and driver circuits.

Single FETs, MOSFETs Selection Notes

Select this component when an N-channel MOSFET with 100V rating and D2PAK footprint is required for automotive designs. It is appropriate for applications demanding low conduction losses and high thermal stability. Compare against IRFS4410Z if automotive certification is not mandatory, noting that the 'AU' prefix specifically denotes qualified automotive grade status.

Single FETs, MOSFETs Part Context

This device belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It represents the automotive variant of the standard IRFS4410Z, distinguished by its adherence to stricter quality and reliability standards defined by the Automotive Electronics Council. The component is engineered for durability under harsh operating conditions found in modern vehicles.

Single FETs, MOSFETs Replacement Considerations

IRFS4410ZPBF serves as the non-automotive equivalent with identical electrical parameters but lacks AEC-Q100 certification. For pin-compatible alternatives, verify datasheet alignment for Rds(on), Qg, and package dimensions before substitution.

AUIRFS4410ZAUIRFS4410Z

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