Single FETs, MOSFETs AUIRFS8405 product image

AUIRFS8405

$1.39
  • Description:MOSFET N-CH 40V 120A D2PAK
  • Series:HEXFET®
  • Mfr:International Rectifier
  • Package:Bulk

SKU:5932d2bcb431 Category: Brand:

  
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AUIRFS8405 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists International Rectifier. Its product description is MOSFET N-CH 40V 120A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFS8405

  • Description:MOSFET N-CH 40V 120A D2PAK
  • Series:HEXFET®
  • Mfr:International Rectifier
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:2.3mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id:3.9V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs:161 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:5193 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):163W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-TO263-3
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for AUIRFS8405

AUIRFS8405

Single FETs, MOSFETs Overview

The AUIRFS8405 is an automotive-grade N-channel HEXFET power MOSFET manufactured by International Rectifier. It utilizes advanced process technology to achieve ultra-low on-resistance, specifically a typical RDS(on) of 1.9 mΩ and a maximum of 2.3 mΩ at 10V gate drive. The device supports a drain-source voltage (VDS) of 40V and offers high current handling capabilities with a silicon-limited continuous drain current of 211A and a package-limited rating of 120A. Designed for rugged operation, it allows repetitive avalanche energy up to the maximum junction temperature of 175°C.

Single FETs, MOSFETs Feature Summary

  • Automotive grade qualification ensuring reliability in demanding vehicle environments
  • Advanced process technology delivering ultra-low on-resistance per silicon area
  • Fast switching characteristics combined with ruggedized device design
  • Repetitive avalanche capability allowed up to the maximum junction temperature

Single FETs, MOSFETs Applications

  • Automotive motor driver circuits
  • On-board charger systems
  • High-efficiency power conversion topologies requiring low conduction losses

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix against the manufacturer's official documentation to confirm exact packaging and tape-and-reel specifications. Ensure the component meets the required automotive quality standards for your target application. Cross-reference the datasheet revision date to confirm technical parameters match your design requirements before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when designing 40V automotive power stages requiring minimal conduction loss. The low RDS(on) reduces thermal management complexity compared to standard MOSFETs. Consider the package-limited current rating for PCB layout constraints rather than relying solely on the silicon limit. Verify compatibility with standard gate drive voltages for optimal performance.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family from International Rectifier, now part of Infineon Technologies. The series is characterized by its focus on efficiency and durability for automotive applications. It represents a generation of power switches optimized for low resistance without sacrificing switching speed or avalanche robustness.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives within the same 40V HEXFET lineup that may offer updated packaging options. Verify that any substitute maintains the same automotive qualification status and thermal characteristics.

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