Single FETs, MOSFETs AUIRFS8407 product image

AUIRFS8407

  • Description:MOSFET N-CH 40V 195A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:0e23a579b4bc Category: Brand:

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AUIRFS8407 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 195A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFS8407

  • Description:MOSFET N-CH 40V 195A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:1.8mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id:4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs:225 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:7330 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):230W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-TO263-3
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for AUIRFS8407

AUIRFS8407

Single FETs, MOSFETs Overview

The AUIRFS8407 is an automotive-grade N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a D2PAK (TO-263) surface-mount package with three pins. Key electrical parameters include a drain-source breakdown voltage of 40 V, a maximum continuous drain current of 195 A limited by the package and 250 A limited by silicon, and a typical on-resistance of 1.4 mΩ at 10V gate drive. The device supports a junction temperature range from -55°C to +175°C, with a maximum power dissipation of 230 W.

Single FETs, MOSFETs Feature Summary

  • Advanced process technology achieving extremely low on-resistance per silicon area
  • Designed for high reliability in automotive applications with fast switching capabilities
  • Capable of repetitive avalanche operation up to the maximum junction temperature

Single FETs, MOSFETs Applications

  • Electric Power Steering (EPS)
  • Battery Switch
  • Start/Stop Micro Hybrid systems
  • Heavy Loads
  • DC-DC Applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm the packaging format, as the base part number corresponds to tube packaging while other variants exist for tape and reel. Ensure the component meets AEC-Q101 qualification standards required for automotive integration. Confirm RoHS compliance status and lead-free characteristics during sourcing.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust performance under high thermal stress and high current loads. The 175°C operating temperature rating allows for efficient thermal management in compact automotive enclosures. Consider the trade-off between the lower on-resistance and the associated gate charge when designing the driver circuitry for optimal switching efficiency.

Single FETs, MOSFETs Part Context

This device belongs to the AUIRFS series of automotive-grade power MOSFETs from Infineon. It utilizes HEXFET technology, which is optimized for low conduction losses. The product line is specifically engineered to meet the stringent durability and reliability requirements of modern vehicle electronics, distinguishing it from standard industrial counterparts.

Single FETs, MOSFETs Replacement Considerations

AUIRFSL8407 is a through-hole alternative in the TO-262 package. AUIRFB8407 is available in the TO-220AB package. Verify pinout compatibility and thermal resistance differences when substituting these variants.

AUIRFS8407AUIRFS8407

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