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AUIRFS8407 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 195A D2PAK. Review the specifications below when checking this part for your BOM.
The AUIRFS8407 is an automotive-grade N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a D2PAK (TO-263) surface-mount package with three pins. Key electrical parameters include a drain-source breakdown voltage of 40 V, a maximum continuous drain current of 195 A limited by the package and 250 A limited by silicon, and a typical on-resistance of 1.4 mΩ at 10V gate drive. The device supports a junction temperature range from -55°C to +175°C, with a maximum power dissipation of 230 W.
Verify the specific ordering suffix to confirm the packaging format, as the base part number corresponds to tube packaging while other variants exist for tape and reel. Ensure the component meets AEC-Q101 qualification standards required for automotive integration. Confirm RoHS compliance status and lead-free characteristics during sourcing.
Select this component for designs requiring robust performance under high thermal stress and high current loads. The 175°C operating temperature rating allows for efficient thermal management in compact automotive enclosures. Consider the trade-off between the lower on-resistance and the associated gate charge when designing the driver circuitry for optimal switching efficiency.
This device belongs to the AUIRFS series of automotive-grade power MOSFETs from Infineon. It utilizes HEXFET technology, which is optimized for low conduction losses. The product line is specifically engineered to meet the stringent durability and reliability requirements of modern vehicle electronics, distinguishing it from standard industrial counterparts.
AUIRFSL8407 is a through-hole alternative in the TO-262 package. AUIRFB8407 is available in the TO-220AB package. Verify pinout compatibility and thermal resistance differences when substituting these variants.
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