AUIRFSA8409-7TRL

Single FETs, MOSFETs Overview

The AUIRFSA8409-7TRL is an automotive-grade N-channel HEXFET power MOSFET in a D2PAK-7TP surface-mount package. It features a 40V drain-source breakdown voltage and a maximum on-resistance of 0.69mΩ at VGS=10V. The device supports continuous drain currents up to 523A (silicon limited) or 360A (package limited). Key electrical parameters include a gate threshold voltage range of 2.2V to 3.9V, total gate charge of 305nC typical, and a maximum power dissipation of 375W. It operates within a junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Automotive qualification per AEC-Q101 standards for high reliability
• Advanced process technology enabling ultra-low on-resistance
• Fast switching speed with improved repetitive avalanche rating
• Capable of operating at junction temperatures up to 175°C

Single FETs, MOSFETs Applications

• Electric Power Steering (EPS)
• Battery Switch
• Start/Stop Micro Hybrid systems
• Heavy Loads
• DC-DC Applications

Single FETs, MOSFETs Procurement Notes

Verify the complete part number includes the 'TRL' suffix to confirm tape and reel packaging containing 800 units. Confirm the base component is the AUIRFSA8409-7P. Ensure the procurement matches the specific D2PAK-7TP form factor required for the target PCB footprint. Check current availability status as automotive components may have varying supply constraints.

Single FETs, MOSFETs Selection Notes

Select this component when a 40V N-channel MOSFET with high current handling is required for automotive environments. The D2PAK-7TP package provides robust thermal performance and mechanical stability. Consider the 0.69mΩ maximum RDS(on) for efficiency calculations. Verify that the 375W power dissipation rating aligns with the system's thermal management capabilities under worst-case operating conditions.

Single FETs, MOSFETs Part Context

This component belongs to Infineon's HEXFET family, utilizing advanced processing techniques to achieve low resistance per silicon area. The 'AUIRFS' prefix indicates an automotive-qualified version of the IRFS series. The '7' in the model number denotes the seven-terminal D2PAK-7TP package configuration, which enhances thermal dissipation compared to standard three-terminal packages.

Single FETs, MOSFETs Replacement Considerations

The datasheet does not list official substitute part numbers. When replacing, ensure the alternative device meets the same AEC-Q101 automotive qualification level. Verify that the replacement maintains the 40V VDS rating and compatible pinout for the D2PAK-7TP package to avoid PCB redesign.

Single FETs, MOSFETs FAQ

What is the difference between the silicon-limited and package-limited drain current?

The silicon-limited current is 523A, representing the theoretical maximum based on junction temperature limits. The package-limited current is 360A, which is restricted by the physical capability of the source bonding wires and leads to handle heat.

Is repetitive avalanche operation allowed for this device?

Yes, the device allows repetitive avalanche operation up to the maximum junction temperature (Tjmax), provided the single pulse avalanche energy and average power dissipation limits are not exceeded.