AUIRFSL3206

Single FETs, MOSFETs Overview

The AUIRFSL3206 is an automotive-grade HEXFET power MOSFET manufactured by International Rectifier, now part of Infineon. It features a 60V drain-source voltage rating and ultra-low on-resistance with typical and maximum values of 2.4mΩ and 3.0mΩ respectively. The device supports continuous drain currents up to 210A (silicon limited) and 120A (package limited). Designed for high reliability, it operates at junction temperatures up to 175°C and offers fast switching capabilities with enhanced dv/dt and di/dt performance.

Single FETs, MOSFETs Feature Summary

• Advanced process technology achieving extremely low on-resistance per silicon area
• Automotive qualification ensuring reliability in demanding environments
• Enhanced dv/dt and di/dt capabilities for robust switching performance
• Repetitive avalanche capability allowed up to maximum junction temperature

Single FETs, MOSFETs Applications

• Electric power steering systems
• Battery switch applications
• Start/stop micro hybrid systems
• Heavy load management circuits
• DC-DC converter modules

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation as International Rectifier or Infineon depending on the production era. Confirm the specific suffix L indicates the D2-Pak package variant. Ensure the component meets current RoHS compliance standards. Cross-reference the ordering number against official distributor catalogs to validate authenticity and traceability before procurement.

Single FETs, MOSFETs Selection Notes

Select this component when designing automotive power stages requiring low conduction losses within a 60V system. The 175°C operating temperature allows for higher thermal margins compared to standard industrial devices. Consider the package-limited current rating for PCB layout constraints. Ensure gate drive voltages align with the specified VGS requirements for optimal RDS(on) performance.

Single FETs, MOSFETs Part Context

This device belongs to the AUIRFS series of automotive-grade power MOSFETs. It utilizes HEXFET technology optimized for high efficiency and reliability. The series is designed to replace older discrete solutions with integrated protection features. It serves as a key component in modern vehicle electrification architectures.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes within the same voltage and resistance class from Infineon's portfolio. Verify pinout compatibility if replacing legacy parts from other manufacturers. Ensure thermal characteristics match the existing heatsink design.