Single FETs, MOSFETs AUIRFSL6535 product image

AUIRFSL6535

$1.26
  • Description:MOSFET N-CH 300V 19A TO262-3
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Bulk,Tube

SKU:5e058c784364 Category: Brand:

  
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AUIRFSL6535 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 300V 19A TO262-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFSL6535

  • Description:MOSFET N-CH 300V 19A TO262-3
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Bulk,Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):300 V
  • Current - Continuous Drain (Id) @ 25°C:19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:185mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id:5V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs:57 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2340 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):210W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Through Hole
  • Supplier Device Package:PG-TO262-3-901
  • Package / Case:TO-262-3 Long Leads, I2PAK, TO-262AA

Single FETs, MOSFETs datasheet and documents for AUIRFSL6535

AUIRFSL6535

Single FETs, MOSFETs Overview

The AUIRFSL6535 is an automotive-grade N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a 300V drain-to-source breakdown voltage and a maximum on-resistance of 185mΩ at VGS=10V. The device supports a continuous drain current of 19A at 25°C case temperature and handles pulsed currents up to 100A. It operates within a junction temperature range of -55°C to +175°C and is housed in a TO-262 (D2-Pak) surface-mount package.

Single FETs, MOSFETs Feature Summary

  • Automotive qualification compliant with AEC-Q101 standards for high reliability.
  • Advanced process technology enabling low on-resistance per silicon area.
  • Capable of repetitive avalanche operation up to the maximum junction temperature.
  • Fast switching speed combined with robust thermal performance.

Single FETs, MOSFETs Applications

  • Automotive power distribution systems
  • High-side and low-side load switches
  • DC-DC converter circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'L' indicates the TO-262 tube packaging configuration, distinct from the TRL reel variant. Confirm that the application environment strictly adheres to the specified absolute maximum ratings, particularly regarding thermal management and avalanche energy limits. Ensure compatibility with standard SMD soldering profiles defined in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component when a 300V rating is required alongside automotive reliability standards. The TO-262 package offers a balance between thermal dissipation capabilities and board space efficiency compared to through-hole alternatives. Consider the 185mΩ maximum resistance for conduction loss calculations in high-current applications operating near the upper temperature limit.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's HEXFET family of power MOSFETs designed specifically for demanding automotive environments. The product line emphasizes durability and efficiency, utilizing proprietary trench gate technology to minimize resistive losses while maintaining high voltage blocking capabilities suitable for vehicle electrical architectures.

Single FETs, MOSFETs Replacement Considerations

The AUIRFS6535 serves as the D2-Pak tape-and-reel equivalent for this device family. Verify pinout compatibility before substituting with other 300V N-channel MOSFETs, as package dimensions and thermal characteristics may differ significantly across manufacturers.

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$1.26
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