AUIRFSL8403

Description：MOSFET N-CH 40V 123A TO262
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:373eb7077cf5 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRFSL8403 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 123A TO262. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFSL8403

Description：MOSFET N-CH 40V 123A TO262
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：123A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：3.3mOhm @ 70A, 10V
Vgs(th) (Max) @ Id：3.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs：93 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3183 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：99W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-262
Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA

Single FETs, MOSFETs datasheet and documents for AUIRFSL8403

AUIRFSL8403

Single FETs, MOSFETs Overview

The AUIRFSL8403 is an automotive-grade N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It utilizes advanced processing techniques to achieve low on-resistance per silicon area, supporting a maximum drain-source voltage of 40 V and a continuous drain current of 123 A at 25°C case temperature. The device features a typical on-resistance of 2.6 mΩ and operates within a junction temperature range of -55°C to +175°C. Packaged in a TO-262 (D2PAK) format, it is designed for high-efficiency switching applications with fast switching speeds and improved repetitive avalanche ratings.

Single FETs, MOSFETs Feature Summary

Advanced process technology enabling extremely low on-resistance per silicon area
Automotive qualification compliant with AEC-Q101 standards
Capable of operating at junction temperatures up to 175°C
Supports repetitive avalanche operation up to the maximum junction temperature

Single FETs, MOSFETs Applications

Electric Power Steering (EPS)
Battery Switch
Start/Stop Micro Hybrid systems
Heavy Loads
DC-DC Converter

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm that the part number prefix 'AU' indicates compliance with automotive industry requirements regarding product discontinuance and process change notifications. Ensure the specific package variant matches the required TO-262 form factor for the intended PCB layout.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust automotive-grade reliability and high current handling capabilities within a 40 V system. Consider the thermal resistance characteristics and the need for adequate heatsinking to maintain junction temperatures within the specified operational limits during continuous load conditions.

Single FETs, MOSFETs Part Context

This component belongs to the HEXFET family of power MOSFETs, specifically engineered for automotive environments. It represents a design optimized for efficiency and durability, leveraging silicon area reduction to minimize conduction losses while maintaining high surge current capacity suitable for demanding vehicle electrical architectures.