AUIRFU8401

Single FETs, MOSFETs Overview

The AUIRFU8401 is an N-channel enhancement mode power MOSFET from the HEXFET series, housed in a 3-pin I-Pak (TO-251AA) through-hole package. It features a maximum drain-source voltage of 40 V and a continuous drain current of 100 A at 25°C case temperature. The device exhibits a typical on-resistance of 3.2 mΩ and a maximum of 4.25 mΩ at VGS=10V. Key electrical parameters include a gate threshold voltage range of 2.2 V to 3.9 V, a total gate charge of 42 nC, and a maximum power dissipation of 79 W. It supports a junction temperature up to 175°C.

Single FETs, MOSFETs Feature Summary

• Automotive qualified per AEC-Q101 standards for high reliability
• Advanced process technology enabling ultra-low on-resistance
• Capable of repetitive avalanche operation up to maximum junction temperature
• Fast switching characteristics with ruggedized device design

Single FETs, MOSFETs Applications

• Electric Power Steering (EPS)
• Battery Switch
• Start/Stop Micro Hybrid systems
• Heavy Loads
• DC-DC Converter

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'U' confirms the I-Pak (TO-251AA) leaded package variant rather than the D-Pak surface mount version. Confirm automotive qualification status aligns with project requirements. Check for RoHS compliance and lead-free manufacturing specifications. Ensure thermal management designs account for the specified junction-to-ambient resistance values under PCB mounted conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a through-hole mounting solution is required for 40 V automotive applications. The I-Pak package offers distinct mechanical advantages over surface mount alternatives for specific chassis or board layouts. Evaluate the 100 A current rating against peak load requirements and ensure adequate heat sinking to maintain junction temperatures within the 175°C limit during continuous operation.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's HEXFET power MOSFET portfolio, specifically engineered for automotive environments. It utilizes advanced processing techniques to minimize on-resistance per silicon area. The product line emphasizes efficiency and reliability, combining fast switching speeds with robust avalanche capabilities suitable for demanding industrial and automotive power control tasks.

Single FETs, MOSFETs Replacement Considerations

The AUIRFR8401 serves as the direct functional equivalent but utilizes a D-Pak (TO-252AA) surface mount package instead of the I-Pak through-hole configuration. Designers must verify footprint compatibility and thermal performance differences when substituting between these package types.

Single FETs, MOSFETs FAQ

Is the AUIRFU8401 capable of handling repetitive avalanche energy?

Yes, the datasheet explicitly states that repetitive avalanche is allowed up to the maximum junction temperature (Tjmax).

What is the maximum gate-to-source voltage rating?

The absolute maximum rating for gate-to-source voltage is ±20 V.

Does this component meet automotive quality standards?

Yes, the AUIRFU8401 is automotive qualified according to the AEC-Q101 standard.