AUIRFU8405

$1.07

Description：MOSFET N-CH 40V 100A I-PAK
Series：HEXFET®
Mfr：International Rectifier
Package：Bulk

SKU:ceca9199ab85 Category: Single FETs, MOSFETs Brand: International Rectifier

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Product introduction

AUIRFU8405 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists International Rectifier. Its product description is MOSFET N-CH 40V 100A I-PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFU8405

Description：MOSFET N-CH 40V 100A I-PAK
Series：HEXFET®
Mfr：International Rectifier
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.98mOhm @ 90A, 10V
Vgs(th) (Max) @ Id：3.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs：155 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5171 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：163W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：IPAK
Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA

Single FETs, MOSFETs datasheet and documents for AUIRFU8405

AUIRFU8405

Single FETs, MOSFETs Overview

The AUIRFU8405 is an automotive-grade N-channel enhancement mode MOSFET from the HEXFET family, manufactured by International Rectifier (Infineon). It features a 40V drain-source breakdown voltage and supports continuous drain currents of up to 120A at case temperature. The device utilizes advanced process technology to achieve ultra-low on-resistance, with typical values around 1.9mΩ and maximums of 2.3mΩ at 10V gate drive. Designed for high reliability, it operates within a junction temperature range of -55°C to 175°C and is qualified under AEC-Q101 standards.

Single FETs, MOSFETs Feature Summary

Automotive grade qualification compliant with AEC-Q101 standards
Advanced process technology enabling ultra-low on-resistance
Ruggedized design allowing repetitive avalanche operation up to maximum junction temperature
Fast switching characteristics optimized for efficient power conversion

Single FETs, MOSFETs Applications

Automotive power distribution systems
High-current load switching applications
DC-DC converter circuits in vehicle electronics

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels due to potential availability of counterfeits. Confirm specific suffix variations match exact package and tape-and-reel specifications required for surface mount assembly processes. Ensure compliance with RoHS directives if applicable to the target market regulations.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust N-channel switching with low conduction losses in automotive environments. Consider the thermal management requirements associated with the D2PAK package and the 163W power dissipation capability. Evaluate gate charge parameters against driver capabilities to ensure optimal switching performance and minimize switching losses during operation.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET Power MOSFET series, representing International Rectifier's specialized line of silicon-based field-effect transistors. The product line emphasizes high current handling and low resistance per silicon area, catering specifically to demanding automotive and industrial power management applications where reliability and efficiency are critical design constraints.