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AUIRFZ44NS is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 49A D2PAK. Review the specifications below when checking this part for your BOM.
The AUIRFZ44NS is an automotive-grade N-channel HEXFET power MOSFET in a D2-Pak (TO-263) package. It features a maximum drain-source voltage of 55 V and a continuous drain current of 49 A at 25°C case temperature. The device has a maximum on-resistance of 17.5 mΩ at VGS = 10V. It supports a junction temperature range from -55°C to +175°C and includes fully avalanche-rated capabilities with repetitive avalanche allowance up to Tjmax.
Verify the specific ordering suffix required for your packaging needs, as the base part number is available in both tube and tape-and-reel forms. Confirm that the component meets the exact electrical requirements for your design, particularly regarding the 55V rating and thermal dissipation limits under your operating conditions.
Select this component when an automotive-qualified N-channel MOSFET with a 55V breakdown voltage is required. Ensure the application can accommodate the D2-Pak footprint and that the thermal design supports the specified junction-to-case resistance. Consider the gate charge characteristics if driving speed is critical.
This device belongs to Infineon's HEXFET family, utilizing advanced planar technology to achieve low on-resistance per silicon area. It is designed specifically for automotive applications, offering robust performance under high temperatures and demanding electrical stress conditions compared to standard industrial components.
Direct replacements include IRFZ44NS and IRFZ44NSTRLPBF for non-automotive contexts, or AUIRFZ44ZS for improved electrical performance in the same package. Verify pinout compatibility and thermal characteristics before substitution.
Yes, it is qualified per AEC-Q101 and supports a junction temperature up to 175°C.
The maximum pulsed drain current is 160 A.
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