Single FETs, MOSFETs AUIRFZ44NS product image

AUIRFZ44NS

  • Description:MOSFET N-CH 55V 49A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:3fc36b9b111f Category: Brand:

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AUIRFZ44NS is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 49A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFZ44NS

  • Description:MOSFET N-CH 55V 49A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):55 V
  • Current - Continuous Drain (Id) @ 25°C:49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:17.5mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:63 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1470 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):3.8W (Ta), 94W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:D2PAK
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for AUIRFZ44NS

AUIRFZ44NS

Single FETs, MOSFETs Overview

The AUIRFZ44NS is an automotive-grade N-channel HEXFET power MOSFET in a D2-Pak (TO-263) package. It features a maximum drain-source voltage of 55 V and a continuous drain current of 49 A at 25°C case temperature. The device has a maximum on-resistance of 17.5 mΩ at VGS = 10V. It supports a junction temperature range from -55°C to +175°C and includes fully avalanche-rated capabilities with repetitive avalanche allowance up to Tjmax.

Single FETs, MOSFETs Feature Summary

  • Automotive qualified per AEC-Q101 standards
  • Advanced planar technology for low on-resistance
  • Fast switching and dynamic dV/dT capability
  • Fully avalanche rated with repetitive avalanche support

Single FETs, MOSFETs Applications

  • Automotive power management systems
  • Motor control circuits
  • Switching applications requiring high reliability

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix required for your packaging needs, as the base part number is available in both tube and tape-and-reel forms. Confirm that the component meets the exact electrical requirements for your design, particularly regarding the 55V rating and thermal dissipation limits under your operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when an automotive-qualified N-channel MOSFET with a 55V breakdown voltage is required. Ensure the application can accommodate the D2-Pak footprint and that the thermal design supports the specified junction-to-case resistance. Consider the gate charge characteristics if driving speed is critical.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's HEXFET family, utilizing advanced planar technology to achieve low on-resistance per silicon area. It is designed specifically for automotive applications, offering robust performance under high temperatures and demanding electrical stress conditions compared to standard industrial components.

Single FETs, MOSFETs Replacement Considerations

Direct replacements include IRFZ44NS and IRFZ44NSTRLPBF for non-automotive contexts, or AUIRFZ44ZS for improved electrical performance in the same package. Verify pinout compatibility and thermal characteristics before substitution.

Single FETs, MOSFETs FAQ

Is the AUIRFZ44NS suitable for high-temperature automotive environments?

Yes, it is qualified per AEC-Q101 and supports a junction temperature up to 175°C.

What is the maximum pulsed drain current?

The maximum pulsed drain current is 160 A.

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