Single FETs, MOSFETs AUIRFZ44VZS product image

AUIRFZ44VZS

  • Description:MOSFET N-CH 60V 57A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:af27ad9b2f33 Category: Brand:

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AUIRFZ44VZS is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 57A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFZ44VZS

  • Description:MOSFET N-CH 60V 57A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:57A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:12mOhm @ 34A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:65 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1690 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):92W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:D2PAK
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for AUIRFZ44VZS

AUIRFZ44VZS

Single FETs, MOSFETs Overview

The AUIRFZ44VZS is an automotive-grade N-channel HEXFET power MOSFET in a D2PAK (TO-263) package. It features a drain-source breakdown voltage of 60 V and a maximum continuous drain current of 57 A at 25°C case temperature. The device exhibits a typical on-resistance of 9.6 mΩ, with a maximum rating of 12 mΩ at VGS = 10 V. It supports a junction temperature range from -55°C to +175°C and offers a maximum power dissipation of 92 W.

Single FETs, MOSFETs Feature Summary

  • Automotive qualified according to AEC-Q101 standards for reliability
  • Advanced process technology enabling ultra-low on-resistance per silicon area
  • Capable of repetitive avalanche operation up to the maximum junction temperature

Single FETs, MOSFETs Applications

  • Automotive power switching applications
  • Motor control circuits
  • Switching mode power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix required for your assembly line, as the base part number is available in both tube and tape-and-reel formats. Confirm that the component meets the necessary automotive qualification standards for your target application before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when high efficiency and low conduction losses are critical in automotive environments. The wide operating temperature range and robust avalanche capability make it suitable for demanding power management tasks where thermal stability and reliability are paramount.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's HEXFET family of power MOSFETs, designed specifically for high-efficiency power switching. The automotive grade variant ensures compliance with stringent industry reliability standards, providing a robust solution for vehicle electronics and industrial power systems requiring high current handling.

Single FETs, MOSFETs Replacement Considerations

AUIRFZ44VZSTRL serves as the tape-and-reel alternative to the standard tube-packaged AUIRFZ44VZS.

Single FETs, MOSFETs FAQ

Is the AUIRFZ44VZS suitable for repetitive avalanche operations?

Yes, the datasheet explicitly states that repetitive avalanche is allowed up to the maximum junction temperature.

What is the maximum gate-to-source voltage rating?

The absolute maximum rating for gate-to-source voltage is ±20 V.

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