AUIRFZ44VZSTRL

Single FETs, MOSFETs Overview

The AUIRFZ44VZSTRL is an automotive-grade N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a 60 V drain-to-source breakdown voltage and a maximum on-resistance of 12 mΩ at 10 V gate drive. The device supports a continuous drain current of 57 A at 25°C case temperature and handles a pulsed current of 230 A. Packaged in a D2PAK (TO-263-3) surface-mount format, it operates within a junction temperature range of -55°C to +175°C. Key electrical characteristics include a typical gate charge of 43 nC and a forward transconductance of 25 S.

Single FETs, MOSFETs Feature Summary

• Automotive qualification compliant with AEC-Q101 standards for reliability
• Advanced process technology enabling ultra-low on-resistance per silicon area
• Fast switching speed combined with improved repetitive avalanche rating

Single FETs, MOSFETs Applications

• Automotive power distribution systems
• Motor control applications
• Switching regulators and DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'TRL' corresponds to the Tape and Reel packaging configuration containing 800 units per reel. Confirm that the component meets the required RoHS compliance specifications and matches the exact D2PAK footprint dimensions provided in the datasheet package outline before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust automotive-grade performance with low conduction losses. Ensure the thermal management solution can handle the specified power dissipation and junction temperatures. Verify that the gate drive voltage aligns with the 10 V threshold for optimal on-resistance performance and check that the PCB layout accommodates the D2PAK package dimensions.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's HEXFET family of power MOSFETs, specifically engineered for high-efficiency switching applications. The 'AU' prefix indicates its qualification for automotive environments, ensuring durability under varying thermal and electrical stresses common in vehicle electronics. It represents a specialized variant optimized for low resistance and high current handling capabilities.

Single FETs, MOSFETs Replacement Considerations

Direct replacement requires verifying pinout compatibility and ensuring the substitute component meets or exceeds the 60 V voltage rating, 12 mΩ maximum on-resistance, and D2PAK package dimensions. Automotive qualification status must be confirmed if the application demands AEC-Q101 compliance.