Single FETs, MOSFETs AUIRFZ48Z product image

AUIRFZ48Z

$0.94
  • Description:AUIRFZ48Z - 55V-60V N-CHANNEL AU
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Bulk

SKU:4afe8a4f6fff Category: Brand:

  
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AUIRFZ48Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is AUIRFZ48Z - 55V-60V N-CHANNEL AU. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFZ48Z

  • Description:AUIRFZ48Z - 55V-60V N-CHANNEL AU
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):55 V
  • Current - Continuous Drain (Id) @ 25°C:61A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:11mOhm @ 37A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:64 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1720 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):91W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for AUIRFZ48Z

AUIRFZ48Z

Single FETs, MOSFETs Overview

The AUIRFZ48Z is an automotive-grade, single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a 55V drain-source voltage rating and supports a continuous drain current of 61A at case temperature. The device utilizes a D2PAK surface-mount package with a maximum power dissipation of 91W. Key electrical parameters include a gate charge of 64nC at 10V and a maximum on-resistance of 11mΩ at 37A and 10V. It operates within a junction temperature range of -55°C to 175°C and holds AEC-Q101 qualification.

Single FETs, MOSFETs Feature Summary

  • Automotive-grade reliability certified under the AEC-Q101 standard for robust performance in vehicle environments.
  • HEXFET technology architecture designed to deliver low on-resistance for efficient power switching applications.
  • D2PAK surface-mount packaging facilitates thermal management and integration into compact circuit boards.

Single FETs, MOSFETs Applications

  • Automotive power distribution systems
  • Motor control circuits
  • Switching mode power supplies

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized channels due to discontinued status. Confirm datasheet revisions and specific ordering suffixes match design requirements. Check for RoHS compliance documentation as per regulatory standards. Validate supply chain sources against manufacturer lists to avoid counterfeit parts.

Single FETs, MOSFETs Selection Notes

Evaluate thermal resistance characteristics against system heat dissipation capabilities. Ensure gate drive voltage aligns with the specified 10V threshold for optimal on-state performance. Consider the D2PAK footprint constraints during PCB layout planning. Verify that the 55V breakdown voltage exceeds peak circuit voltages with adequate safety margins.

Single FETs, MOSFETs Part Context

This component belongs to Infineon's HEXFET family of power MOSFETs, specifically tailored for automotive electronics. It represents a specialized variant optimized for high-current switching tasks within strict automotive quality frameworks. The part integrates advanced silicon technologies to balance conduction losses and switching speeds.

Single FETs, MOSFETs Replacement Considerations

Public records indicate the AUIRFZ48Z is obsolete. Review alternative automotive-grade N-channel MOSFETs from the same manufacturer series. Verify pin compatibility and thermal specifications before substituting. Consult official cross-reference guides for validated replacements.

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