Single FETs, MOSFETs AUIRL2203N product image

AUIRL2203N

$1.12
  • Description:AUTOMOTIVE N-CHANNEL
  • Series:HEXFET®
  • Mfr:International Rectifier
  • Package:Bulk

SKU:c6e542ac05ee Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

AUIRL2203N is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists International Rectifier. Its product description is AUTOMOTIVE N-CHANNEL. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRL2203N

  • Description:AUTOMOTIVE N-CHANNEL
  • Series:HEXFET®
  • Mfr:International Rectifier
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:7mOhm @ 60A, 10V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:60 nC @ 4.5 V
  • Vgs (Max):±16V
  • Input Capacitance (Ciss) (Max) @ Vds:3290 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):180W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220AB
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for AUIRL2203N

AUIRL2203N

Single FETs, MOSFETs Overview

The AUIRL2203N is an N-channel enhancement mode MOSFET from the HEXFET series, manufactured by Infineon (formerly International Rectifier). It features a maximum drain-source voltage of 30 V and a continuous drain current of 75 A. The device utilizes a TO-220AB package for through-hole mounting with three pins. Key electrical parameters include a maximum on-resistance of 7 mΩ, a gate threshold voltage range of 1 V to 1 V, and a maximum power dissipation of 130 W. The typical gate charge is 60 nC at 10 V. Operating temperatures range from -55 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

  • High current handling capability suitable for power switching applications
  • Logic level compatible gate drive characteristics
  • Robust thermal performance with high power dissipation rating

Single FETs, MOSFETs Applications

  • Motor control systems
  • Power supply circuits
  • Industrial automation controls

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation as Infineon Technologies, noting the historical association with International Rectifier. Confirm the specific package variant matches the TO-220AB through-hole requirement. Ensure the component meets the required operating temperature range and electrical specifications for the intended circuit design before procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low on-resistance and high current capacity in a through-hole configuration. Consider the logic-level gate drive compatibility for direct interfacing with standard control signals. Evaluate thermal management requirements given the 130 W power dissipation rating and ensure adequate heat sinking for sustained operation.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs, known for optimized on-resistance and switching performance. The AUIRL2203N specifically targets automotive and industrial markets where reliability and high current density are critical. It represents a transition from the original International Rectifier product line to Infineon's portfolio.

AUIRL2203NAUIRL2203N
$1.12
Buy Now

Recent News