Single FETs, MOSFETs AUIRL3705ZS product image

AUIRL3705ZS

$1.18
  • Description:MOSFET N-CH 55V 75A D2PAK
  • Series:HEXFET®
  • Mfr:International Rectifier
  • Package:Bulk

SKU:e3fbdfbbd278 Category: Brand:

  
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AUIRL3705ZS is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists International Rectifier. Its product description is MOSFET N-CH 55V 75A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRL3705ZS

  • Description:MOSFET N-CH 55V 75A D2PAK
  • Series:HEXFET®
  • Mfr:International Rectifier
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):55 V
  • Current - Continuous Drain (Id) @ 25°C:75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:8mOhm @ 52A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:60 nC @ 5 V
  • Vgs (Max):±16V
  • Input Capacitance (Ciss) (Max) @ Vds:2880 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):130W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:D2PAK
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for AUIRL3705ZS

AUIRL3705ZS

Single FETs, MOSFETs Overview

The AUIRL3705ZS is an N-channel enhancement mode MOSFET from the HEXFET series, manufactured by Infineon Technologies. It features a maximum drain-source voltage of 55 V and a continuous drain current of 89 A at case temperature. The device utilizes a DPAK (TO-252) surface-mount package with three pins. Key electrical parameters include a maximum on-resistance of 12 mΩ, a gate threshold voltage range of 1 V to 3 V, and a maximum power dissipation of 130 W. It operates within a junction temperature range of -55 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

  • Enhanced switching performance through optimized gate charge characteristics
  • Low on-state resistance for efficient power conduction
  • Robust avalanche energy capability for reliable operation in inductive loads

Single FETs, MOSFETs Applications

  • DC-to-DC converter circuits
  • Motor control applications
  • Power management systems

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation as Infineon Technologies, noting that International Rectifier was acquired. Confirm the specific suffix 'ZS' corresponds to the DPAK (TO-252) package variant. Ensure compliance requirements match the intended deployment region, as older HEXFET variants may not meet current RoHS standards without specific verification.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high current handling up to 89 A with low voltage drop. The DPAK package suits surface-mount designs with moderate thermal constraints. Compare gate charge specifications against driver capabilities to ensure adequate switching speed. Verify thermal resistance values if operating near the maximum junction temperature limit.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs, known for high efficiency and ruggedness. The AUIRL3705ZS represents a specific configuration within the IRL3705 product line, tailored for automotive or industrial environments given the 'AU' prefix often denoting automotive qualification. It serves as a discrete power switch solution replacing older bipolar transistor technologies.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include the IRL3705ZL in TO-262 packaging for through-hole applications, though pin compatibility differs. The AUIRFR3710ZTRR offers similar functionality but with higher voltage ratings. Verify pinout and thermal pad configurations before swapping packages.

AUIRL3705ZSAUIRL3705ZS
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