AUIRLL014N

Description：MOSFET N-CH 55V 2A SOT-223
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:3e6a7a3ef4e8 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRLL014N is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 2A SOT-223. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRLL014N

Description：MOSFET N-CH 55V 2A SOT-223
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：140mOhm @ 2A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：230 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-223
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for AUIRLL014N

AUIRLL014N

Single FETs, MOSFETs Overview

The AUIRLL014N is an automotive-grade single N-channel HEXFET power MOSFET in a SOT-223 package. It features a 55V drain-to-source breakdown voltage and a maximum on-resistance of 0.14Ω at VGS=10V. The device supports continuous drain currents up to 2.8A at 25°C and 2.0A under minimum footprint conditions. It includes logic-level gate drive capability, fast switching characteristics, and full avalanche rating with repetitive avalanche allowed up to Tjmax.

Single FETs, MOSFETs Feature Summary

Automotive qualified per AEC-Q101 standards
Advanced planar technology for low on-resistance
Logic level gate drive operation
Fast switching speed with dynamic dv/dt rating

Single FETs, MOSFETs Applications

Automotive electronic systems
Low-side switching applications
Power management circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix (TR) indicates tape and reel packaging containing 2500 devices. Confirm that the component meets the required automotive qualification standards for your application environment. Ensure thermal design accounts for the junction-to-ambient resistance values provided in the datasheet for your specific PCB layout.

Single FETs, MOSFETs Selection Notes

Select this component when automotive reliability is required alongside low-voltage switching capabilities. Consider the SOT-223 package constraints for thermal dissipation. Evaluate the logic-level gate drive requirements against your controller output voltages to ensure proper saturation.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's HEXFET family, utilizing advanced planar technology. It is specifically designed for automotive applications requiring ruggedized device designs. The product line emphasizes efficiency and reliability through optimized processing techniques.

Single FETs, MOSFETs Replacement Considerations

Consult official replacement lists or cross-reference tools for verified substitutes. Ensure any alternative maintains equivalent automotive qualification status and package compatibility.