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AUIRLR024ZTRL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N CH 55V 16A DPAK. Review the specifications below when checking this part for your BOM.
The AUIRLR024ZTRL is an automotive-grade N-channel HEXFET power MOSFET in a D-Pak (TO-252AA) package. It features a 55V drain-source breakdown voltage and a typical on-resistance of 46mΩ at VGS=10V, with a maximum of 58mΩ. The device supports a continuous drain current of 16A at 25°C case temperature and operates within a junction temperature range of -55°C to +175°C. Key electrical parameters include a gate threshold voltage of 1.0V to 3.0V, total gate charge of 6.6nC typ, and single pulse avalanche energy of 25mJ.
Verify the specific ordering suffix ZTRL corresponds to the tape and reel packaging format required for your assembly line. Confirm that the component meets the latest AEC-Q101 qualification requirements for your target automotive application. Ensure compatibility with your PCB footprint specifications for the D-Pak package before finalizing procurement orders.
Select this component when a 55V rated N-channel MOSFET with low on-resistance is required for automotive environments. Consider the 16A continuous current rating and 175°C thermal capability for high-temperature operation. Evaluate the logic-level gate drive requirement against your controller output voltage to ensure proper saturation.
This part belongs to Infineon's HEXFET family of power MOSFETs designed for high efficiency and reliability. The AUIRLR024Z variant specifically targets automotive markets, offering improved processing techniques for lower resistance per silicon area compared to standard industrial counterparts.
Check datasheets for alternative parts with matching 55V VDS, similar RDS(on), and compatible TO-252AA packages. Verify pinout compatibility and thermal resistance characteristics to ensure seamless integration without redesigning the heat dissipation structure.
Yes, the datasheet specifies a tested single pulse avalanche energy of 25mJ and allows repetitive avalanche operation up to Tjmax.
The absolute maximum rating for gate-to-source voltage is ±16V.
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