AUIRLR2703TRL

Single FETs, MOSFETs Overview

The AUIRLR2703TRL is an automotive-grade, single N-channel Power MOSFET from the HEXFET family. It features a 30V drain-source breakdown voltage and a maximum on-resistance of 45mΩ at 10V gate drive. The device supports a continuous drain current of 20A at case temperature and 23A limited by silicon. It utilizes advanced planar technology for low thermal resistance and fast switching characteristics within a DPAK (TO-252-3) surface-mount package.

Single FETs, MOSFETs Feature Summary

• Automotive qualified with extended operating temperature range up to 175°C
• Logic-level gate drive capability for direct microcontroller interfacing
• Ultra-low on-resistance optimized for high-efficiency power conversion
• Fully avalanche rated for robust performance in inductive load applications

Single FETs, MOSFETs Applications

• Automotive power distribution systems
• Motor control circuits
• DC-DC converter stages
• Load switching applications

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels due to the presence of counterfeits in the market. Confirm that the specific suffix 'TRL' corresponds to the tape-and-reel packaging format required for automated assembly processes. Ensure compliance with RoHS directives if applicable to the target region. Cross-reference datasheet revisions to confirm pinout consistency with existing PCB footprints before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when automotive reliability standards are mandatory for low-voltage switching applications. The 45mΩ on-resistance balances conduction losses against gate charge requirements. Consider the DPAK package thermal dissipation capabilities relative to the expected continuous current load. Verify that the logic-level gate threshold aligns with the available control voltage levels in the system design to ensure full enhancement during operation.

Single FETs, MOSFETs Part Context

This part belongs to the International Rectifier HEXFET power transistor series, specifically designed for automotive environments. It represents the integration of advanced silicon planar technology with automotive qualification standards. The device serves as a critical switching element in power management architectures requiring high current handling and low insertion loss in compact surface-mount configurations.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include IRLR2703TRR and AUIRLR2703TRR. Verify electrical parameter equivalence and package compatibility before substitution. Ensure any replacement maintains the same automotive grade certification and thermal performance characteristics.