AUIRLR2908

Description：MOSFET N-CH 80V 30A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:68228e3a091e Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRLR2908 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 80V 30A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRLR2908

Description：MOSFET N-CH 80V 30A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：28mOhm @ 23A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：33 nC @ 4.5 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：1890 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：120W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for AUIRLR2908

AUIRLR2908

Single FETs, MOSFETs Overview

The AUIRLR2908 is an N-channel HEXFET power MOSFET designed for automotive applications. It features a D-Pak (TO-252AA) surface-mount package with three pins. The device supports a maximum drain-source voltage of 80 V and operates within a junction temperature range of -55 °C to +175 °C. Maximum continuous drain current is rated at 30 A (package limited) or 39 A (silicon limited). The typical on-resistance is 22.5 mΩ at VGS = 10V, with a maximum of 28 mΩ. Total gate charge is typically 22 nC.

Single FETs, MOSFETs Feature Summary

Automotive qualified per AEC-Q101 standards
Logic-level gate drive capability
Fully avalanche rated with repetitive avalanche allowance up to Tjmax
Lead-free and RoHS compliant construction

Single FETs, MOSFETs Applications

Automotive power switching circuits
Low-side load switching applications
DC motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix required for your production needs. Standard packaging is available in tubes of 75 units. Tape and reel options are offered in quantities of 3000 units. Confirm that the component meets the necessary automotive qualification requirements for your target application before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when an automotive-grade N-channel MOSFET with low on-resistance is required. The logic-level gate drive allows compatibility with standard microcontroller outputs. Ensure the thermal management design accommodates the specified junction-to-case thermal resistance for reliable operation under high current loads.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's HEXFET family, utilizing advanced planar technology to achieve low on-resistance per silicon area. The AUIRLR2908 variant specifically targets automotive environments, offering ruggedized device design and fast switching speeds suitable for demanding electrical conditions.

Single FETs, MOSFETs Replacement Considerations

Direct replacement requires verifying pinout compatibility and ensuring the substitute meets AEC-Q101 automotive qualification. Check that the alternative device offers equal or lower RDS(on) and sufficient avalanche energy ratings for the specific circuit topology.